| 1. | Additional contributions to the refractive index are expected to come from the dopant(6. 8)as well as from the electro-optic effect .
预料其它对折射率的影响来自掺杂剂以及电光效应。 |
| 2. | 4 ) npb , balq3 and tbp as dopants were doped into adn matrix
最后,研究了以rubrene作为辅助掺杂剂的有机红光发光器件,由于使用 |
| 3. | Mechanical properties of ultrathin diamond - like films and the effects of surfaces and dopants
金刚石类超薄膜的力学性能和表面性质与掺杂剂对它的影响 |
| 4. | Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon
掺硼碜磷硅单晶电阻率与掺杂剂浓度换算规程 |
| 5. | Testing of materials for semiconductor technology ; determination of impurities in carrier gases and dopant gases ; determination of c - c - hydrocarbons in nitrogen by gas - chromatography
半导体工艺材料的检验.运载气体和掺杂剂气体中杂质的 |
| 6. | From the oes information , it was found that b2h6 and b ( ch3 ) 3 contributed differently to the formation and properties of the window layers . some other conclusions which had instructions to the experiments were also obtained
分析( oes )显示两种掺杂剂对材料的形成和性能影响不同，并得出了一些有指导意义的结论。 |
| 7. | As shallow electron traps ( sets ) dopants , the action of k4fe ( cn ) 6 that can increase photoelectron lifetime and photographic efficiency is analyzed . optimization concentration of k4fe ( cn ) 6 in cubic agcl emulsion is affirmed
分析了k _ 4fe ( cn ) _ 6掺杂物作为一种浅电子陷阱掺杂剂对于提高光电子寿命、改善感光性能的作用机理。 |
| 8. | Electromagnetic wave shielding fabric was prepared by in - situ chemical polymerization of aniline in the presence of cotton substrate , using hydrochloric acid as the doping agent and ammonium persulfate as the oxidant
摘要以盐酸为掺杂剂，过硫酸铵为氧化剂，在棉织物表面采用现场吸附聚合法生成一层导电聚苯胺，由此设计出一种具有良好电磁屏蔽效能的织物。 |
| 9. | The flux of n2o greatly affected the film ' s microstructure . as the n2o flux was increased , the content of anatase decreased and rutile increased gradually . the size of rutile became smaller with increase of the flux of n2o
掺杂剂n _ 2o的流量对薄膜的结构有很大影响，随着流量的增大，锐钛矿相tio _ 2逐渐向金红石相转变，金红石晶体的颗粒尺寸也不断减小。 |
| 10. | The growth and semiconducting of grains are influenced by a lot of factors , such as the type and contents of dopants , ti / sr ratio , sintering temperature and so on . all of the above factors are relevant and restricted with each growth
Srtio _ 3晶粒生长和半导化受到多种因素的影响，诸如掺杂剂的种类和含量、 ti / sr比、烧结温度等，这些因素是相互影响、相互作用的。 |
