| 1. | As the concentration of the influent increases, the removal of the same percentage of bod will require additional facilities .
当进水浓度提高时，去除同样百分比的BOD则需要加大设备。 |
| 2. | Modification of rinsing techniques by installing cascading or counter-current rinse systems increases the contaminant concentration .
安装了阶梯式装置或对流漂洗装置，可改进漂洗技术，把污染物的浓度提高。 |
| 3. | As the concentration of the influent increases , the removal of the same percentage of bod will require additional facilities
当进水浓度提高时，去除同样百分比的bod则需要加大设备。 |
| 4. | The process by which the surface carbon concentration of a ferrous alloy is increased by diffusion from the surrounding environment
从周围环境中向铁基合金表面扩散碳，从而使其表面碳浓度提高的工艺过程。 |
| 5. | Compared with micro - sized y2o3 : eu and gd2o3 : eu phosphors prepared by a conventional method , nanosized y2o3 : eu and gd2o3 : eu synthesized by the present work , gives a clear blue shift in the emission spectrum , and a clear red shift in the excitation spectrum
同时，发现了纳米晶一些新奇的发光性质，即：发射光谱蓝移现象，激发光谱红移中电荷迁移带( ctb )明显红移，猝灭浓度提高等。 |
| 6. | It was found that before the plating , there is section time to gestating , that we call the " gestating time " and the plating was ended spontaneously after some time , named " plating time " . the analysis of the solution after plating indicated that the too much decrease of ph value results in the reaction to be stopped . the plating time was shortened when the ph and the temperature of the bath were increased
结果表明，镀液ph浙江大学硕士学位论文范启义2003年3月摘要值、施镀温度提高，由于反应的速度加快，使反应时间缩短；硫酸铜浓度提高，有助于加快反应速度，从而缩短反应时间； edta浓度提高，使镀液稳定性升高，对反应时间的影响等效于硫酸铜浓度的降低；而甲醛浓度提高，虽然反应的速度加快，但由于可用于还原的量增加，因此反应时间增加；装载量提高，因能镀覆的表面积增加，使反应时间缩短。 |
| 7. | It is proposed that the higher dose condition creates more hot carriers but the lower sensitivity to hot carrier effect . therefore , the optimum dose for reliability is determined from the trade - off between the above two aspects . finally , a simple model is proposed and discussed
本文还深入研究了sde区掺杂浓度对器件热载流子可靠性的影响，指出浓度的提高虽然会产生更多的热载流子，但由于其对热载流子损伤的敏感度降低，因此将存在一种折衷，最后通过一个简单的寄生电阻模型，对掺杂浓度提高后，器件对热载流子损伤敏感度降低的现象做出了很好的解释。 |
| 8. | The results showed that the factors that could shorten the plating time increased the plating rate . the plating rate was increased when the ph and the temperature of the bath were increased . it was also increased by increasing the concentration of copper sulfate and by decreasing the concentration of edta
结果表明，镀液出值和施镀温度升高，镀速提高：提高硫酸铜浓度，可以增加镀速； nm浓度提高，镀液稳定性增加，镀速下降：随甲醛浓度的提高，镀这光增加而后下降。 |
| 9. | Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基于流体动力学能量输运模型，对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件，且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同，界面态引起的器件特性的退化不同.沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大 |
| 10. | It was also noted that irradiation treatment with low dose ( 10gy ) of y rays exerted slight stimulating effects on callus induction and formation of embryogenic calli in particular . production of embryogenic calli was obviously promoted by addition of 0 . 1 ~ 0 . 2mg / l bap or 2 . 5mg / l cuso4 5h2o , or enhancement of sucrose concentration to 60g / l in subculture medium
在继代培养基中添加0 . 1 0 . 2mg lbap或2 . 5mg l硫酸铜，或将继代培养基中蔗糖浓度提高到60g l能促进胚性愈伤组织发生，提高胚性愈伤组织频率。 |
