English translation for "直接带隙半导体"

direct gap semiconductor
direct-gap semiconductor

Related Translations:

资产隙:  asset play

径隙:  radial play

活门隙:  play of valve

斗隙:  embrasure

岩隙:  clint (in soluble rock)

背隙:  back clearanceback lash

隙规:  clearance gageclearance gaugegap gagegap gaugegap(/clearance) gauge

通风隙:  air course

活塞环隙:  piston ring gap

加速隙:  acceleration gap

Example Sentences:

	1.	Direct - gap semiconductor 直接带隙半导体
	2.	Zinc oxide ( zno ) is an important wide - band ( 3 . 37ev ) semiconductor with low dielectric constant Zno是一种重要的宽禁带(常温下为3 . 37ev )低介电常数的直接带隙半导体材料。
	3.	Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x 采用光吸收法测得mn人d n 。 te 。晶体属于直接带隙半导体，其能隙eg随着组分互的增加线性增大。
	4.	In all of the optoelectronic materials , cds was paid more attention for the excellent properties , which has commercial and potential applications in light - emitting diodes , solar cells , and other optoelectronic devices 在众多半导体纳米材料中， cds纳米粒子以其优良的性能引起了许多科学家的极大关注。 cds是典型的-族直接带隙半导体化合物，室温下其禁带宽度为2 . 42ev 。
	5.	Zno is a directed band semiconductor with a big binding energy . it has gained substantial interest because its large exiton binding energy ( 60mev ) , which could lead to lasing action based exiton recombination even above room temperature , such as led , ld and so on Zno是一种宽禁带的直接带隙半导体材料,具有非常高的激子束缚能( 60mv ) ,即使在室温条件下激子也不会分解,因此可以被用作光发射器件,如led和ld等。
	6.	The results show that the differences between the two composites are very large . although the micrograph of the ni nano - wire and the co nano - wire are nearly the same , as the metal composition increased , the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ) , however , the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ) . meanwhile , the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively 或no组份比的增加， ni / aao吸收边的红移量仅约13nln ，而co / aao的吸收边红移量却超过了80lun ，分析发现ni / aao复合体系具有间接带隙半导体的光学特征，而co从ao复合结构则具有直接带隙半导体的光学特征; 5 .实验研究了a创aao纳米有序阵列复合结构的光吸收特性，在其光吸收谱上出现了较强的ag表面等离子体振荡吸收峰，随ag沉积量的减少，吸收峰位发生红移，且逐渐展宽
	7.	Due to its intrinsic merits , such as wide band gap , high electron saturated drift velocity , high melting point , good coefficient of thermal conductivity , anti - radiation and good chemical stability , gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature , high frequency and high power electronic devices Gan是直接带隙半导体材料，以其禁带宽度大、电子饱和漂移速度大、熔点高、热导率高、抗辐射能力强和化学稳定性好等优点成为制造短波长光发射器件及高温、高频、大功率电子器件的理想材料。

Similar Words：

"直接打印器" English translation, "直接打印载波电报" English translation, "直接大红" English translation, "直接大红4b" English translation, "直接带隙" English translation, "直接代槽黑" English translation, "直接代价测量" English translation, "直接代理" English translation, "直接代码" English translation, "直接代入法" English translation