| 1. | A mordant helps fix the dye to the material
腐蚀液帮助染料固定在原料上。 |
| 2. | A solution called a mordant is used in the dying process
有一种被称为“腐蚀液”的方法被运用在染色工艺流程中。 |
| 3. | Subsequently , the resin is allowed to harden . the specimen is then immersed in a corrosive solution to soften and digest the uninjected parts
待树脂硬化后，便把标本放于腐蚀液中，以软化和溶解没有注射的部位。 |
| 4. | Subsequently , the resin is allowed to harden . the specimen is then immersed in a corrosive solution to soften and digest the uninjected parts
待树脂硬化后，便把标本放于腐蚀液中，以软化和溶解没有注射的部位。 |
| 5. | So the mirror and mechanical part can be fabricated in a one - level mask step by bulk micromachning of ( 100 ) with koh etching . we can on off the light path and switch the light exchange by controlling the movement of mirror
本论文使用传统的koh腐蚀液，利用硅材料的各向异性的特点，加工出了垂直于衬底表面的微镜结构，利用这种微镜结构可以完成光线的切换，实现光路的开关功能。 |
| 6. | 1 ) in the solutions with high hno3 concentration , the etching is similar to chemical polishing which produces flat surface . 9 . 3 % surface reflectance is obtained through stopping etching when the blue color is appearing on the surface , which is lower than 15 . 7 % reflectance of sio2 layer arc
这对于提高太阳电池的效率是极有益的。 ( 2 )反射特性、形貌和腐蚀液的关系1 )在高hno _ 3的溶液中，近似化学抛光，制备的样品表面相对光滑。 |
| 7. | This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate , which were provided by merchants from home and overseas , as well as their influence on electrical parameters
本文系统地研究了国内外各生产厂家提供的gaas衬底中用熔融koh腐蚀的位错、 ab腐蚀液腐蚀出的ab微缺陷的密度和分布情况以及它们对衬底电参数(电阻率、迁移率、载流子浓度)的影响。 |
| 8. | The corrosion behavior of porous silicon in hf / h2o2 solution has been studied . it is found that the inner corrosion of porous silicon takes precedence , that is , the solution enters the pores through capillary and the whole porous silicon collapses because of the simultaneous corrosion of the silicon pillars
研究了多孔硅在hf / h _ 2o _ 2溶液中的腐蚀行为，发现多孔硅的腐蚀以孔内腐蚀为主，腐蚀液通过毛细效应进入纳米孔内，孔壁被腐蚀掉后使得多孔硅整层同时坍塌。 |
| 9. | Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied , since the etching process can be controlled by the ph value
3 .初步研究了利用pecvd淀积si3n4薄膜的工艺,讨论了影响薄膜质量的相关工艺参数;初步研究了用icp刻蚀sio2和cr的相关工艺;通过分析不同浓度tmah腐蚀液在不同温度下其ph值的变化,研究了以溶液ph值作为腐蚀溶液的控制参数。 |
| 10. | In order to make integration of theory with practice , a lot of experiments have been done . mask - making technology , photoetching and wet - etching processes have been optimized . the author also presents the application and commercial value of silicon v - groove arrays
在实践上，对制作工艺积极探索，提出新的制备硅掩蔽膜的工艺方案，对影响光刻质量的因素深入分析，试验摸索出适用于v型槽的各向异性湿法腐蚀的腐蚀液配方，独立优化设计了制作硅v型槽的相关工艺，制作出高质量的硅v型槽。 |
