English translation for "effective mobility"
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- 有效迁移率
有效淌度
Related Translations:
mobility: n.1.可动性，活动性，能动性。2.灵活性，可变动性。3.【物理学】动性，迁移率；【化学】淌度；【军事】运动性，机动性。短语和例子the ionic mobility 离子迁移率[淌度]。n.群众。 mobility and nobility 〔戏谑语〕老百姓和贵族。
- Example Sentences:
| 1. | And then the general equation of effective mobility is acquired
给出了有效导纳的一般公式。 | | 2. | Ambipolar effective mobility
双极性有效迁移率 | | 3. | By using of effective mobility power flow method , vibration level and radiated power level of a element cylindrical shell are studied
利用有效导纳功率流法研究了基本圆柱壳体的表面振级和声辐射功率级。 | | 4. | By the advantage of effective mobility power flow method , power transfer rules are understandable not only of every structure , but also between the joint structures
利用有效导纳功率流法，不仅可以了解结构内的功率传递情况，还可以全面地了解系统中的功率传递规律。 | | 5. | 2 . effective mobility power flow method is presented , which is a new theory and is applicable in research of the power transfer principle of complex connected systems with complicated excitation
结合复功率流法的概念和有效导纳的研究思想，提出了适合于复杂激励复杂连接系统功率传递规律研究的新理论、新方法? ?有效导纳功率流法。 | | 6. | A model of the interface state density distribution near by valence band is presented , and the dependence of the threshold voltage on temperature , the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics , transfer characteristics and effective mobility of sic pmosfets are analyzed . thirdly , the output characteristics and the drain breakdown characteristics are modeled with the procedure medici . the output characteristics in the room temperature and 300 ? are simulated , and the effects of gate voltage . contact resistance , interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一个价带附近的界面态分布模型，用该模型较好地描述了sicpmos器件阈值电压随温度的变化关系、 c - v特性曲线以及亚阈特性曲线；分析了源漏寄生电阻对sicpmos器件输出特性、转移特性以及有效迁移率的影响；论文中用模拟软件medici模拟了sicpmos器件的输出特性和漏击穿特性，分别模拟了室温下和300时sicpmos器件的输出特性，分析了栅电压、接触电阻、界面态以及其他因素对sicpmos击穿特性的影响。 | | 7. | After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次,根据器件参量对阈值电压和输出特性的影响,以提高器件的跨导和电流驱动能力为目的设计了strained - soimosfet器件结构,详细分析栅极类型和栅氧化层厚度、应变硅层厚度、 ge组分、埋氧层深度和厚度以及掺杂浓度的取值,对器件进行优化设计。 |
- Similar Words：
- "effective memory band width" English translation, "effective microorganisms" English translation, "effective minesweeping depth" English translation, "effective minute ventilation" English translation, "effective mixing length" English translation, "effective mobilization" English translation, "effective modulation" English translation, "effective modulation factor" English translation, "effective modulus" English translation, "effective modulus of elasticity" English translation
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