English translation for "junction temperature"

结温

Related Translations:

junction junction:  交叉处新闻业

dentinoenamel junction:  齿本质番质连合牙质釉质界

active junction:  有源结

pn junction:  pn接面pn结

lost junction:  迷失人生

cemental junction:  牙本骨质界

essex junction:  埃塞克斯章克申位于艾斯克斯强克逊

anchoring junction:  锚着连接

rectosigmoid junction:  直肠乙状结肠连接部

bhatni junction:  珀德尼章克申

Example Sentences:

	1.	Single junction temperature transducer sensor 单结温度传感器
	2.	Junction temperatures within the mosfet and the coefficients of conduction of the mosfet package and heat sink are other important characteristics of pmdc motors Mosfet中结点的温度、 mosfet封装和散热片的传导系数是pmdc电动机的其它重要的特征。
	3.	Bipolar transistors of the type of 3dd820 and 3dd15d ( with f2 metal - pack ) are taken as an example in the study to verify the method of controllable junction temperature 以3dd820 , 3dd15d （ f2金属封装）双极晶体管为实验对象，对结温可控的晶体管稳态工作寿命试验方法进行了验证。
	4.	To increase the accuracy of the test method , a steady - state operation life test method with additional measuring and strictly controlling transistor junction temperature , in the highest temperature range , is given 旨在提高晶体管稳态工作寿命试验方法的可信度，提出了一种在试验过程中实时测量并严格控制晶体管结温在最高允许结温附近的稳态工作寿命试验方法。
	5.	Analyzing the various problems of current steady - state operation life test standard , it is pointed out that , not measuring and controlling , transistor junction temperature in current transistor steady - state operation life test can lead to fatal inaccuracy of the test results 摘要在分析了现行标准中晶体管稳态工作寿命试验方法存在问题的基础上，认为在现行的稳态工作寿命试验中没有对晶体管的结温实施测量和控制，是导致试验结果不准确的重要原因。
	6.	Theoretical analysis and simulation results demonstrate that asymmetries in lower and upper sidebands and imd magnitude variation depending on envelope frequency and junction temperature can appear , these results are in accordance with measurement results , and show that electrical and thermal memory effects exist 理论分析和仿真结果表明功率放大器上下边带不平衡和互调失真幅度依赖于包络频率和结温，结果和测量的结果是一致的，说明存在电和热记忆效应。
	7.	And the results of calculation and numerical simulation indicate , without increasing the intrinsic collector - junction area of power devices , collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter , improve heat - dissipating method of each cell of the chip , enhance the distribution uniformity of junction temperature and current of each cell of the chip , reduce the thermal resistance and raise the dissipation power pd and output power p0 , fairly well relax the contradiction among frequency , out - put power and dissipation power of the devices , and further improve the devices " property against second breakdown 而计算分析和二维数值模拟分析结果表明：梳状集电结(基区)结构在不增加器件本征集电结面积的条件下，增大了器件的本征散热面积和基区周长，改进了每个子器件单元内的散热方式，提高了单元内结温和电流分布的均匀性，降低了器件的热阻，增大了器件的耗散功率和输出功率，较好地缓解了目前传统结构中频率与功率、功耗的矛盾，并有利于改善器件抗二次击穿的性能。
	8.	In this paper , firstly , monolithic materials cosb3 and bi2te3 were prepared by sparkle plasma sintering ( sps ) respectively , and at the same time the microstructure of cosb3 and bi2te3 were studied by sem ; the seebeck coefficients and electrical conductivities of monolithic materials were measured by standard - four - probe method ( ulvac zem - 700 ) in a he atmosphere simultaneously , and their thermal conductivities were investigated by laser flash method ( tc - 7000 ) in vacuum . secondly , the junction temperature of graded bi2te3 / cosb3 thermoelectric materials was optimized based on the thermoelectric transport properties of monolithic materials , also when graded materials were used in the temperature difference ranging from 300k to 800k , the length ratio of monolithic materials cosb3 and bi2te3 were optimized in theory . thirdly , graded bi2te3 / cosb3 thermoelectric materials were prepared by two - step sps sintering , and the relationship between its average seebeck coefficients and temperature were calculated by theory mo del 均质材料cosb _ 3和bi _ 2te _ 3的电导率和seebeck系数采用标准四端子法于he气氛下在zem - 1上同时进行测量；热导率采用激光微扰法( tc - 7000 )于真空状态下进行测量；其次，在对均质材料cosb _ 3和bi _ 2te _ 3热电传输特性研究的基础上，对结构梯度bi _ 2te _ 3 cosb _ 3热电材料的界面温度进行了优化；为了使结构梯度bi _ 2te _ 3 cosb _ 3热电材料在300k至800k的温度范围内具有最佳的热电性能，本研究同时对梯度结构热电材料当中均质材料cosb _ 3和bi _ 2te _ 3材料的长度进行了优化设计；第三，通过两步放电等离子烧结的方法制备出了结构梯度bi _ 2te _ 3 cosb _ 3热电材料；采用理论计算的方法研究了梯度结构热电材料平均seebeck系数和温度的关系；同时为了验证设计的结果，本论文对结构梯度bi _ 2te _ 3 cosb _ 3热电材料的开路输出电压和热端温度之间的关系及梯度材料在300k至800k的温度范围内使用时的功率输出进行了相应的研究。

Similar Words：

"junction style" English translation, "junction style(of thermocouple)" English translation, "junction surface" English translation, "junction table" English translation, "junction temoverride" English translation, "junction terminal board" English translation, "junction terminal transfer train" English translation, "junction terrace" English translation, "junction test" English translation, "junction tetrode transistor" English translation