| 1. | Influence of in - situ oxygen plasma processing on the resistivity of diamond thin film
原位氧等离子体处理对金刚石薄膜电阻率的影响 |
| 2. | Users can create , modify , monitor and troubleshoot plasma process from the front panel
用户可以创造、更改、监控等离子体处理过程甚至可以利用前面的仪表盘充当故障检修员 |
| 3. | Charged dust particles exist widely in space , laboratory as well as plasma processing
带电的尘埃粒子广泛存在于宇宙空间、实验室的等离子体装置中和材料的等离子体加工等环境中。 |
| 4. | Due to the use of microwaves the plasma systems 400 and 660 provide for fast and damage - free plasma processing
由于微波技术的应用,等离子体400和660系列可提供快速与无损害的等离子处理。 |
| 5. | Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication , such as plasma etching and films deposition
本论文介绍了我们对ecr等离子体cvd系统的测试、 bn薄膜的制备和薄膜光学特性研究。 |
| 6. | The interactions between dust particles and plasmas have attracted much attention in the recent years since dust contamination is recognized as a serious problem in plasma processing of integrated circuits
近年来，特别是在人们认识到尘埃粒子是影响半导体集成电路加工质量的关键问题后，尘埃粒子与等离子体的相互作用备受关注。 |
| 7. | Now the method has application at large . because the laser - produced plasmas are rapidly varying , temporal resolution of spectral features is important to investigation of x - ray radiancy evolvement with time , many dynamic plasma processes and radiation transport . soft x - ray time - resolved diagnosis technology have had quiet great progress since from sixty " s end to seventy " s early
由于激光等离子体变化快，且其x射线辐射的时间特性包含有丰富的物理信息，因此时间分辨的x射线辐射特性诊断是研究激光等离子x射线辐射随时间的演变，各种动力学过程和辐射输运等物理问题所必需的关键诊断技术。 |
| 8. | Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors , bulk - acoustic - wave devices , surface - acoustic - wave devices , varistors , light emitting , light detecting devices and so on . undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一种新型的直接带隙宽禁带半导体材料,具有六方纤锌矿结构,较高的激子束缚能( 60mev ) ,较低的电子诱生缺陷和阈值电压低等优点,在uv探测器、蓝紫光led和ld等光电子器件领域有巨大的应用潜景。 |
