| 1. | As the sputtering power increases , the sputtering rate also increases
随着溅射功率的增大，溅射速率增大。 |
| 2. | Linearity of the calibration curves was rather good after correction of sputter rate , with correlation coefficients of above 0 . 99 for most elements
经溅射率校正后的工作曲线线性较好，大部分元素的相关系数在0 . 99以上。 |
| 3. | When the sputtering power is lower than 300 w the sputtering rate increases slowly ; when the sputtering power is higher than 300 w the sputtering rate increases rapidly , so there exists a threshold
但在300w以下，溅射功率增大，溅射速率增加较慢；当功率大于300w后，溅射速率增大变快，即存在一“阈值” 。 |
| 4. | Through optimization of excitation parameters of the glow - discharge source and calculation of the sputtering rate of the certified reference materials , a method for the quantitative surface analysis of nc - si : h film was established
方法应用于实际掺杂纳米硅薄膜样品的分析，并将分析深度、剖析结果与表面形貌仪的结果进行了对照。 |
| 5. | Xrd analysis proved that the films were still amorphous . raman analysis indicated that the composition and structure varied from the bulk glasses in that the sputtering rate for each element was different . more se - se bonds formed in the films
用磁控溅射方法以此靶材溅射得到了1 - 10 m厚的、均匀的ge - ga - s - se硫系玻璃薄膜，其大的折射率表明其用于集成光学具有明显的优势。 |
