| 1. | Inside the sphere the field is zero everywhere, otherwise charge would move within the sphere .
球内电场处处为零，否则电荷将在球内移动。 |
| 2. | In addition , the distributing function of electric field in the cavity and its relevant factors are showed
还给出了腔内电场分布函数及相关参数。 |
| 3. | Exposure to electric or magnetic fields in the low and intermediate frequency range - methods for calculating the current density and internal electric field induced in the human body - general
曝露于低频和中频电场或磁场.人体内感应的电流密度和内电场的计算方法.总则 |
| 4. | Owing to the field enhancement in the domain , the avalanching gain and recombination radiation are induced and the switches occur the special phenomenon of the lock - on effect
由于单极电荷畴内电场强度增大，从而导致开关体内载流子雪崩倍增和辐射复合，引发了lock - on效应的特有现象。 |
| 5. | Exposure to electric or magnetic fields in the low and intermediate frequency range - methods for calculating the current density and internal electric field induced in the human body - part 1 : general
曝露于低频和中频电场或磁场.人体内感应的电流密度和内电场的计算方法.第1部分:总则 |
| 6. | Exposure to electric or magnetic fields in the low and intermediate frequency range - methods for calculating the current density and internal electric field induced in the human body - exposure to magnetic fields - 2d models
处于低频和中频电场或磁场.人体内感应产生的电流密度和内电场的计算方法.处于磁场中. 2维模型 |
| 7. | Exposure to electric or magnetic fields in the low and intermediate frequency range - methods for calculating the current density and internal electric field induced in the human body - part 2 - 1 : exposure to magnetic fields - 2d models
处于低频和中频电场或磁场.人体内感应的电流密度和内电场的计算方法.第2 - 1部分:处于磁场中. 2维模型 |
| 8. | The electric dyadic green ' s function inside the sphere and the magnetic dyad outside the sphere are given . in addition , spherically multilayered conductor is discussed and the dyadic green ' s functions are given for a two - layer conductive sphere
进一步讨论了同心分层导体球情况，并给出了电流元位于两层同心导体球的里层时球内电场和球外磁场的并矢格林函数。 |
| 9. | Charge qs was located near the interface of silicon and oxide . with more charge , the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector , and then the vertical breakdown voltage was raised . the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
该模型认为，将界面电荷qs引入i层si / sio2的si界面，根据电位移矢量的全连续性，界面电荷qs越多，使i层内电场增加，直至sio2的临界电场，从而提高纵向击穿电压vb . v ，很好得解决了器件的纵向耐压问题。 |
| 10. | Firstly , in spherical coordinate system , the sovp formulation for the time - harmonic electromagnetic fields of the current dipole in conductive infinite - space is derived , using reciprocity theorem and transforming relations between special functions . then , selecting appropriate coordinate system , using superposition principle , the boundary - value problem of modified magnetic vector potential on the problem of a time - harmonic current dipole in spherical conductor is solved and analytical solution is obtained . finally , by means of the addition formulas of legendre polynomial and spherical harmonics function of degree n and order 1 , the analytical solution in spherical coordinate system specially located is transformed into that in spherical coordinate system arbitrarily located
首先利用特殊函数间的转化关系和互易定理推导得到了无限大导体空间中球坐标下时谐电流元电磁场的二阶矢量位形式：然后利用叠加原理，选择合适坐标系，求解了导体球中时谐电流元的修正磁矢量位边值问题，得到了问题的解析解；最后依据不同坐标系下电磁场解的转化原理，借助勒让德多项式和n次1阶球谐函数的加法公式，将坐标系特殊安放时的电磁场解析解变换到坐标系一般安放时的解析解，给出了球内电场和球外磁场的并矢格林函数。 |
