| 1. | The application of porous silicon is anticipated
最后对多孔硅的应用做出了展望。 |
| 2. | Investigation on optical properties of p - type lightly doped porous silicon
型轻掺多孔硅的发光特性研究 |
| 3. | Electrochemical fabrication and microstructure study of porous silicon
多孔硅的电化学形成及微结构研究 |
| 4. | Firstly , the porous silicon was modified by surface chemical modifying
首先，对多孔硅进行了化学表面修饰。 |
| 5. | Imaging processing in scanning electron microscopy photograph of porous silicon
多孔硅结构电镜图像的数字处理 |
| 6. | Effect of anodized conditions on field emission of porous silicon cold cathode
阳极氧化条件对多孔硅冷阴极场发射特性的影响 |
| 7. | Optical and electrical properties of the composite of porous silicon and poly n - vinylcarbazole
多孔硅与聚乙烯咔唑复合光电性能研究 |
| 8. | Effect of the structures of iron - passived porous silicon annealed in pure nitrogen ambients
高纯氮气退火处理对铁钝化多孔硅形貌的影响 |
| 9. | The solution of h2o2 is first used to post - treat thick porous silicon ( ps ) layers
C 、论文首次提出使用过氧化氢后处理多孔硅厚膜工艺。 |
| 10. | In addition , the growth mechanism on porous silicon has been discussed in view of growth kinetics
从晶体生长动力学角度分析了多孔硅上外延硅的生长机理。 |
