| 1. | Dynamic analysis of polar microregions in therelaxor ferr oelectrics
驰豫铁电体中极化微区动力学分析 |
| 2. | It is explained by cross relaxation of the ( 2h11 / 2 , 4s3 / 2 ) states
这主要是由于交叉驰豫作用的结果。 |
| 3. | Longitudinal relaxation time
驰豫时间 |
| 4. | This special type of material may possess optical constants that are different from those at the fully relaxed material
这种特别的材料类型可能会拥有与完全驰豫材料不同光学常数。 |
| 5. | It ' s generally believed that the qgp , if formed in the relativistic heavy ion collisions , be in a thermal non - equilibrium state during initial stage and then evaluates into equilibrium state
通常认为在相对论重离子碰撞中生成的qgp首先是处于非平衡态，它要经过一个由非平衡态向平衡态演化的驰豫过程。 |
| 6. | All the heat treated samples have a damping peak over the range of 150 and 260 ( called tp peak ) . by analyzing , the peak is a dislocation peak and it can be explained with g - l theory
分析表明，此峰为位错峰，因为该峰从峰的位置，频率驰豫特性，以及阻尼性能测量的应变振幅相关性，都与g一l理论符合的很好。 |
| 7. | It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base , the spin relaxation time and the width of the base
自旋晶体管中的电流放大系数主要取决于注入基区的自旋极化电子的极化程度，基区中自旋的驰豫时间及基区的宽度。 |
| 8. | The bulk electronic properties of gaas have been described both by the second - neighbour tight - binding formalism for ( 112 ) , ( 113 ) ( 114 ) surface and nearest neighbour tight - binding sp3s * for ( 2 5 11 ) surface
再构后，不考虑表面原子的驰豫变化， gaas ( 2511 )表面表面态的变化主要表现在o . gev ~ 1 . oev的一些表面态完全消失。 |
| 9. | When the coupling rabi frequency c satisfies the condition of c > 1 / 2 3 , the transient process is a relaxation oscillation behavior . as the coupling rabi frequency c decreases , the transient oscillation behavior slows up
当_ c _ 3 / 2时，这个瞬态过程为一驰豫振荡过程，在不同大小的耦合光rabi频率_ c条件下， _ c取值越小，瞬态过程振荡越慢。 |
| 10. | But for the furnace cooling samples , all samples have another damping peak about at 3 00 ( called tp2 peak ) . the peak is not of relaxation model , the peak temperature does not vary with frequencies
除炉冷试样外，其余各热处理态试样均在300左右，有一内耗峰几2峰，此内耗峰无驰豫特性。频率变化，内耗峰的位置不变，对同一热处理态试样内耗峰位置不变。 |
