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Home > english-chinese > "czochralski method" in Chinese

Chinese translation for "czochralski method"

单晶提拉法
乔克拉尔斯基法
切克劳斯基法
丘克拉尔斯基单晶拉制法
丘克拉斯基法


Related Translations:
czochralski technique:  切克劳斯基技术
czochralski crystal:  直立单晶
czochralski process:  丘克拉尔斯基拉单晶法
czochralski silicon:  切克劳斯基法生长硅
czochralski growth:  丘克拉斯基生长
czochralski grown ingot:  切克劳斯基法生长晶体
czochralski grown crystal:  切克劳斯基法生长晶体丘克拉斯基法生长的晶体
czochralski production system:  切克劳斯基晶体生长装置
liquid encapsulation czochralski method:  液体密封切克劳斯基法
Example Sentences:
1.Nd : nay 2 crystal growth by czochralski method
2晶体生长与性能研究
2.Liquid encapsulation czochralski method
液体密封切克劳斯基法
3.In this paper , the series of in : linbo _ ( 3 ) crystals were grown by the czochralski method and then the crystals were polarized and processed
本文用提拉法生长出一系列掺铟铌酸锂( in : linbo _ 3 )晶体,并对晶体进行极化和加工处理。
4.In this paper , the author demonstrated the basic principle , development history and characters of high - press liquid - enveloped czochralski method ( leg ) , and its application in producing the gap semi - conductors , at the same time of introducing the general situation of them
本文论述了高压液封直拉法的基本原理、发展历史、特点,该法在半导体材料行业的应用及应用中的影响因素,化合物半导体材料磷化镓的概况、高压液封直拉法在制备该材料时的应用。
5.Therefore , in this paper , two directional solidification methods , czochralski method and electron - beam floating zone melting method , were used to obtain such material . the directional solidifition microstructures of si - tasi2 system was performed using neophot - 1 , amray - 100b sem and jem - 2000cx tem analysis technique
本文采用切克拉斯基法( cz法)和电子束区熔法( ebfzm )两种定向凝固方法制备该共晶自生复合材料;借助金相技术、电镜技术、图象处理技术等多种分析测试手段,考察了si - tasi _ 2共晶定向凝固组织和及其相应的工艺规范。
6.The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4 , which makes the procedure more convenient and the sedimentation more compact . based on the syntheses of the raw materials , the czochralski method was used to grow the crystal from different charges . by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition , the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing , but is related to the impurity of the charges
采用多种方法合成了用于晶体生长的yvo _ 4原料,改进了液相合成法中获得yvo _ 4沉淀的方法,使得该方法更为简便,获得的沉淀更加致密;在原料合成的基础上,采用提拉法对来源不同的生长原料进行了生长,并通过对在相同气氛下生长的晶体的紫外透过谱线的对比,指出了该吸收峰的存在与晶体生长方向及有无退火无关,进而提出该吸收峰的存在与合成原料中有无杂质有关。
Similar Words:
"czochralski crystal pulling technique" Chinese translation, "czochralski crystal-pulling furnace" Chinese translation, "czochralski grown crystal" Chinese translation, "czochralski grown ingot" Chinese translation, "czochralski growth" Chinese translation, "czochralski process" Chinese translation, "czochralski production system" Chinese translation, "czochralski silicon" Chinese translation, "czochralski technique" Chinese translation, "czochralskimethod" Chinese translation