| 1. | Acquisition of low surface recombination velocity on surface of p - type si
单晶低表面复合速度的获得 |
| 2. | Surface recombination velocity
表面复合速度 |
| 3. | From the experiment results and the normalization results , the surface recombination velocities of silicon pn junction were obtained
通过测量结果和计算结果的归一化比较，获得了其表面复合速率。 |
| 4. | Depending on the image method and point source approximation method , the physic model was established , and the formula of photo - current versus surface recombination velocity was obtained
导出了光电流与表面复合速率相应关系的计算公式，确定了可进行电量测量的实验装置。 |
| 5. | The pc id has been used in order to analyse the influence of surface recombination on the performance of crystalline silicon solar cell . in different surface concentration , the relation of the surface recombination velocity and the performance ( voc , jsc , g ) of crystalline silicon solar cell is discussed
采用pc1d就表面复合对太阳电池性能的影响进行理论计算，探讨了晶体硅太阳电池不同表面浓度条件下，表面复合速度与太阳电池开路电压、短路电流以及转换效率之间的关系。 |
| 6. | The report for sio2 passivation and forming gas treatment utilization in domestic scale manufacture as well as the detail abroad technologies has not been read . porous silicon heavy phosphorous diffusion passivation and grain boundary recombination velocity for multicrystalline silicon solar cells have not been reported
其中sio _ 2表面钝化和forminggas处理在规模化生产上的应用国内未见报导，国外技术无详细报导，多孔硅重磷扩散多晶硅钝化及多晶硅晶界复合速度表示未见报道。 |
| 7. | Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity . the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained . the crystalline silicon solar cell spectral response , contact resistance and minority carrier lifetime measurement systems were established
钝化机理研究获得了表面复合对不同表面掺杂浓度晶体硅太阳电池性能的影响、表面和界面复合速度的理论表达式；研究得到了减反射膜对太阳电池短路电流增量比的极限；建立了太阳电池光谱响应、栅线电极接触电阻和少子寿命等测试系统。 |
