| 1. | Sbn standard book number
标准图书号 |
| 2. | Only appropriate field is applied , can planar waveguide be fabricated in sbn crystal
只有沿sbn晶体的c轴方向施加适当的外电场，才能写入平面光波导。 |
| 3. | Only at higher temperature the ttb sbn can be formed by the reaction of sn and bn phases
高温有助于斜方晶系结构的sn相和bn相转变为四方晶格钨青铜结构的sbn相。 |
| 4. | 0xl0 - 2 c / cm2k respectively . and the sbn thin film can avoid plumbum pollution of pzt ferroelectric material
而且， sbn在制备过程中能够避免pzt等铁电材料的铅污染的问题。 |
| 5. | The ra value is 4nm . this implies k : sbn buffered sbn thin films fabricated with the sol - gel process have a
由此验证了薄膜与晶体相似的性质一一ksbn薄膜的横向电光系数大于sbn薄膜。 |
| 6. | It is proved that the approximate single crystal hetero - epitaxial sbn thin film was not formed until heat - treated at 1000 ? on si substrate
只有在1000的退火温度下才能在si衬底上生成近似单晶外延的sbn薄膜。 |
| 7. | The results indicate that the sign and the strength of the index changes are controllable by changing the polarity and the amplitude of the applied filed
结果表明，改变外加电场的极性和幅度可以改变掺杂sbn晶体中折射率变化的正负和大小。 |
| 8. | Sbn : cr is one of the most promising photorefractive materials for various nonlinear optical applications due to its high photorefractive sensitivity and rapid response in red spectral region
作为一种在红光区具有较高光折变灵敏度和快速响应的优质光折变材料， sbn cr晶体具有重要的研究价值。 |
| 9. | In addition , the nb ( oc2hs ) 5 - precursor sbn thin films doping the k + were crystallized with preferred c - axis orientation which is similar with the orientation of the nbcl5 - precursor sbn films
Sbn薄膜表面粗糙度ra为12nm ;加了mgo缓冲层的sbn薄膜更加致密，结晶颗粒更小，表面也更平整， ra为4nm 。 |
| 10. | And then the method to reduce the optics loss was discussed too in this paper . the research indicated that the crystallized phase and degree of orientation were dependent on annealing temperature
研究了各生长条件如退火温度、前驱溶液、衬底类型、缓冲层( ksbn 、 mgo )等参数对sbn薄膜性能的影响以及降低光学损耗的措施等。 |
