English translation for "漂移区"

drift region

Related Translations:

漂移:  1.(漂流移动) be driven by the current; drift about2.[电子学] drift; shift; shifting; shunt running; creeping; wander◇漂移浮标 drifting buoy; 漂移度 driftance; 漂移晶体管 drift transistor; 漂移力 drift force; 漂移

基线漂移:  base line driftbase line wanderbaseline driftbaseline shiftbaseline wander (blw)

回转仪漂移:  gyro drift

漂移编辑:  drifting editing

无限漂移:  full drift

时钟漂移:  clock drift

风漂移:  wind drift

直流漂移:  dc shiftdc wander

漂移时间:  drift time

灵敏度漂移:  sensitivity drift

Example Sentences:

	1.	It is represented the optimization and implementation of step drift doping profiles soi ldmos Soi阶梯掺杂漂移区ldmos的优化设计与制备实验。
	2.	The models currently used are either modified from low voltage mos models or based on macro model of simple polynomial established dddmos drift region resistance , both of which are limited and cannot provide a globally accurate physical model 业界目前使用的模型只是在低压mos模型基础上作一些修改,或者通过用简单多项式的形式建立dddmos漂移区电阻的宏模型以建模。
	3.	In the model of on - resistance , we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region . then we provide the explicit dependence between on - resistance and doping distribution parameter 导通电阻模型考虑了ldmos的沟道横向杂质分布和漂移区杂质纵向分布的结构特点，给出了导通电阻与杂质分布参数的明确函数关系。
	4.	During the research of the novel high - voltage soi lateral structure , we established its blocking theory based on poisson equation , which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state 在新型横向高压器件结构tsoi的研究中，本文通过二维泊松方程建立其解析理论，正确描述了漂移区中电场的分布，并阐明其耐压机理。
	5.	In this thesis , the optimization of soi step drift doping profiles ldmos is addressed . the work of the author included the optimization of soi single - resurf ldmos and ; design and implementation of a step drift doping profiles soi ldmos 围绕soi阶梯掺杂ldmos器件的优化问题,本文从器件结构和工艺材料方面出发,借鉴已有理论,进行了soisingle - resurfldmos的优化研究以及soi阶梯掺杂漂移区ldmos的优化设计及器件制备实验。
	6.	Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation 采用数值模拟分析方法,深入研究了漂移区长度、漂移区浓度、埋氧层厚度、顶层硅厚度、氧化层电荷以及衬底偏压对resurf效应、击穿电压和导通电阻的影响。
	7.	The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations . by the combination of spice mos ( level = 3 ) and the macro model , the complete dddmos model was then obtained , which accords well with simulated data . by simulating and comparing different devices of different process parameters , the model is applicable for different bias regions and can be useful in the power integrated circuit research in future 首先介绍了器件建模的基本原理及相关模拟技术,然后利用工艺模拟软件生成器件基本结构,并对其基本特性进行了分析;分析了业内和学术界比较通用的高压器件建模的方法,随后在模拟实验的基础上着重分析了dddmos的物理特性,在求解泊松方程、连续性方程等基本方程的基础上,建立有物理意义的漂移区电阻的宏模型;随后结合spicemos ( level = 3 )模型而得到完整的dddmos模型,此模型与模拟数据符合得比较好,通过对不同工艺参数的器件进行模拟比较,该模型能够覆盖不同的工作偏压范围,具有较明确的物理意义,对今后的功率集成电路的研发有一定的参考意义。
	8.	In theoretical analysis , the motion of radially - emitted electron beam in diode region and drift region has been analyzed , and the relation between radial momentum or current of electron beam and the guiding magnetic field has also been studied , then the possibility to optimize the guiding magnetic field has been derived . the motion of radially - emitted beam electrons in smooth bore magnetron and smooth bore milo has also been studied theoretically . at last , the motion of radially - emitted beam electrons in compound axial and azimuthal magnetic field has been studied 在理论分析中,初步分析了轴向发射条件下电子在二极管区域和漂移区的运动规律,电子径向动量随着外加磁场变化的规律,以及电子束电流随着外加磁场的变化规律,还有二极管区域磁场优化的可能性;分别研究了有轴向磁场时以及有角向磁场时径向发射的电子在光滑阳极结构中的运动规律,最后分析了在轴向和角向复合磁场中电子的运动规律。
	9.	In addition to pic method , the numerical computation method is used as a compensation for the study of the characteristics of electron beam . the two methods are used separately to attain the trajectory of axially - emitted electron beam in diode region and drift region , and the trajectory of radially - emitted electron beam with axial , azimuthal , as well as compounded axial and azimuthal magnetic field . three two - dimensional codes and two three - dimensional codes have been made out to compute the trajectories 本文特点之一就是采用粒子模拟和数值计算相结合的方法进行仿真计算,分别得到了轴向发射条件下电子在二极管区域和漂移区的轨迹,径向发射条件下电子在角向磁场、轴向磁场、角向和轴向复合磁场中电子的运动轨迹,分别编制了三个二维电子轨迹计算程序和两个三维电子轨迹计算程序,最后将粒子模拟和数值计算得到的结果进行了对比,得到了较为满意的结果。

Similar Words：

"漂移偏差" English translation, "漂移频率" English translation, "漂移期" English translation, "漂移气球" English translation, "漂移迁移率" English translation, "漂移区域" English translation, "漂移扫描" English translation, "漂移失效" English translation, "漂移时间" English translation, "漂移式检流计" English translation