This film has been identified as polycrystal znse with zinc blende structure by xrd Xrd结果显示该薄膜为立方闪锌矿结构的znse多晶薄膜。
3.
The main metals mineral are chalcopyrite , the next clinohedrite , alpha chalcocite bornite , malachite and azurite . a little amount blende , galena incidentally ryby silver , bismuth 矿石中主要金属矿物为黄铜矿、其次为黝铜矿、兰辉铜矿、斑铜矿及铜的氧化物孔雀石、蓝铜矿。闪锌矿、方铅矿少量，偶见淡红银矿、硫酸钮矿。
4.
One cadmium resistance strain of fungi designated as f2 which could survive 2000mg / l of cadmium was isolated from blende soil with high content of cadmium . it showed high ability of cadmium accumulation . it belongs to phoma sp 从高镉含量的闪锌矿土样中经分离、筛选，得到一株可在2000mg l镉浓度下存活并对镉具有较强的富集能力的丝状真菌，编号为f2 ，经形态学鉴定归入茎点霉属( phoma ) 。
5.
Zn power , se power and diethylamine was used as the sources in this method and nanocrystal znse powders were synthesized at 225 . these powders have been identified as polycrystal znse with zinc blende structure by xrd . the size of particle is about 100nm ~ 200nm 采用zn粉和se粉为原料，以二乙胺为溶剂，在225下得到了znse粉末， xrd结果显示其为znse多晶粉末，从tem照片可看出其颗粒的尺寸约为100nm 200nm 。
6.
There are intensive structural and magmatic hydrothermal movement with obvious zonal surface shape alterations , which are demonstrated by silicified function , sericitization , potassium , epidotization , hornstone , etc . the ore structural fabric mainly behaves in form of filling action with minerals such as pyrite , chalcopyrite , salenite , blende and electrum , which typomorphic feature shows a hypothermal pattern of metallogeny 呈面型蚀变，分带特征明显。矿区内矿体规模巨大，矿石组构主要为以充填交代作用为主，矿石矿物主要为黄铁矿、黄铜矿、闪锌矿、方铅矿和银金矿。而且矿物的标型特征显示了低温成矿的特点。
7.
Various chemical strategies have been introduced to the system to affect the dynamics of reaction , and thus , to adjust the nucleation and growth process . by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature , both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled . a precipitate slow - release controlled method was designed in the synthesis of manganese selenides 在化学调控合成思想的指导下，运用已取得的调控合成的成功经验，利用mnseo3沉淀缓释放出mn2 +源和硒源，在调节反应温度的基础上，于同一反应体系成功地合成了mnse2和mnse的立方体和球形微米晶，实现了产物组成和维度的调控，并对它们的磁行为进行了研究。
8.
The cdte films doped te are deposited onto glass substrate by close spaced sublimation . the x - ray diffraction data indicate the pure cdte films are polycrystalline zinc - blende structure with grain orientation predominantly along ( 111 ) direction . the electrical properties of cdte films are investigated by hall effect measurement using the van der pauw method X射线衍射分析表明，纯cdte薄膜是立方闪锌矿结构， （ 111 ）晶面取向生长； hall效应实验测量发现薄膜电阻很高，呈p型电导，面电阻率数量级达1010
9.
However , it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap , which will lead to an extremely large miscibility gap 然而要在gap中实现高浓度的掺氮并不容易。这主要是由于gap和gan之间较大的物理特性的差异，特别是晶格结构和晶格常数的差异，使得gap和gan存在较大的可混溶性间隙，从而难以生长高质量的高掺氮的gap材料。
