| 1. | Due to the large exciton binding energy of 60mev , which ensures the high efficient excitonic emission at room temperature , it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices
由于氧化锌具有较高的激子束缚能( 60mev ) ，保证了其在室温下较强的激子发光，因而被认为是制作紫外半导体激光器的合适材料。 |
| 2. | This direct band - gap material has a large exciton binding energy ( 60mev ) , which permits excitonic recombination even at room temperature . thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions
它有较高的激子束缚能（常温下为60mev ） ，使得其在室温下可以发射紫外激光，因此作为新一代的半导体发光材料受到广泛关注。 |
| 3. | The wavelength of pump light in white light mode is 400nm . 2 . the excitonic tunneling from cdznse qw to cdse quantum dots under resonant excitation was investigated using femtosecond pump - probe technology on the cdznse quantum well / cdse quantum dots structure
用飞秒脉冲泵浦-探测方法研究了cdse量子点znse cdznse量子阱结构在对cdznse量子阱的激子共振激发条件下激子在量子阱与量子点之间的隧穿。 |
| 4. | 4 . photolumescence and micro - photoluminscence of cdznse qw / znse / cdse qds with different znse barrier thickness was studied to investigate the influence of tunneling on excitonic combination in quantum well and quantum dots . we studied the temperature dependent of the excitonic recombination
通过cdse量子点znse cdznse量子阱结构在不同垒层厚度情况下的发射谱和变温激子发射谱，研究了激子隧穿过程对量子点和量子阱中激子复合的影响。 |
| 5. | Compared to gan , which is one of the most successful wide - band semiconductor materials at present , zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno , 25mev for gan ) , which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile , homogeneous bulk zno is available
和gan相比， zno薄膜具有生长温度低，激子复合能高( zno ： 60mev ， gan ： 21 25mev ) ，受激辐射阈值较低，能量转换效率很高等优点。有可能实现室温下较强的紫外受激发射，制备出性能较好的探测器、发光二极管和激光二极管等光电子器件。 |
| 6. | It is widely accepted that zno is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap ( eg = 3 . 3ev ) and large excitonic binding energy of 60 mev , which was testified by the results of optically pumped stimulated emission and lasing from zno thin films
氧化锌作为一种宽带隙半导体（ 3 . 3ev ） ，激子束缚能大（ 60mev ） ，在室温下容易获得强的激子发射，而且可能成为紫外激光的重要材料。因此，对氧化锌的研究已成为继gan之后宽带隙半导体研究的又一热点。 |
| 7. | Low dimensional ii - vi semiconductor structure is one of ideal material for exciton nonlinear optical devices at room - temperature and greem - blue emission devices due to it ' s large exciton binding energy and strong room - temperature exciton effect . thus the excitonic effects in ii - vi semiconductor quantum wells and asymmetric double quantum wells have been studied deeply and widely
特别是-族半导体低维结构由于较大的激子束缚能和强的室温激子效应，使它有希望成为制备室温激子非线性器件和蓝绿光器件的理想候选材料之一，为此-族半导体量子阱和非对称双量子阱的激子效应已被很深入地研究。 |
| 8. | Due to the large exciton binding energy of 60mev , which ensures the high efficient excitonic emission at room temperature , it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices . since the first observation of the stimulated ultraviolet emission at room temperature , zno has become another hotspot in the region of uv light emitting researching
氧化锌在室温条件下具有较高的激子束缚能( 60mev ) ，保证了其在室温下较强的激子发光，是制作紫外光电子器件的合适材料，自1997年首次发现zno室温紫外受激发射以来， zno研究已成为继gan之后紫外发射材料研究的又一研究热点。 |
| 9. | In 1990s , a calculation of the ground - state energy of an exciton confined in a cylindrical quantum wire in the presence of a uniform magnetic field is reported as a function of wire radius , using a variational approach by gang li , spiros v . branis and k . k . bajaj . a . balandin and s . bandyopadhya present variational calculations of the ground - state exciton binding energy and exciton radius in a quantum wire subjected to an external magnetic field . these studies have been primarily responsible for our current understanding of the nature of excitonic states in a quantum wire subjected to an external magnetic field
九十年代中期，人们就开始了关于在外加磁场时量子线中激子特性的研究， gangli , spirosv . branis和k . k . bajaj利用变分法，对于圆柱形的量子线中激子的基态束缚能进行了计算，发现对于一个给定的磁场值，激子的基态束缚能比不加磁场时变大。 |
| 10. | Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo , tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo . as we know , band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
利用mg _ xzn _ ( 1 - x ) o薄膜，可以在保持zno六方纤锌矿( wurtzite )结构的同时有效调节调节薄膜的禁带宽度，制备出基于氧化锌的量子阱、超晶格及相关的光电器件，如基于氧化锌的紫外光探测器、紫外发光二极管和紫外激光二极管等光电子器件。 |
