| 1. | High - field pulsar
强磁场脉冲星 |
| 2. | A faint glow enveloping the high - field electrode in a corona discharge , often accompanied by streamers directed toward the low - field electrode
电晕在电晕放电中在高压电极出现的一种微弱光辉，常伴随有朝向低压电极的电流 |
| 3. | Experimentally , an interesting six - route ndr characteristic , resulting from the form of split miniband structures and the extension of high - field domain in the superlattice , is observed at room temperature
实验的结果显示，由于此分?迷你带结构及超晶格结构中高场区域的扩展，于常温下可观察出?道轨迹之多重负微分电阻特性。 |
| 4. | After formamide intercalation , three proton peaks were detected . the proton peak of the inner surface hydroxyl of the intercalation compound shifts to high - field with 52 . 3 - 2 . 7 , whereas the proton peak of the inner hydroxyl shifts to 5 - 0 . 3 toward low - field
甲酰胺插层后产生3个质子峰，内羟基质子峰向低场位移至- 0 . 3 ，内表面羟基质子峰向高场位移到2 . 3 2 . 7 。 |
| 5. | On the other hand , in the four years since the discovery of superconductivity in this compound , the research community has made considerable improvements in critical current density , both in the low - field value and , perhaps more important , in the higher - field values
另一方面，在发现这个化合物具有超导性的四年后，不论是在低磁场，或者是在更重要的较高磁场下，这个研究领域的专家已经将临界电流密度提高了许多。 |
| 6. | For the requirement of more negative differential resistance ( ndr ) routes , three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition , and high - field domain in the superlattice is formed under sufficiently large operation bias
为获得?多轨迹的负微分电阻，本研究组件使用?相当薄之砷化铟镓?子井，可使四周期磷化铟/砷化铟镓超晶格结构在平带情况下形成三个分?的?子化能阶，且于足够大的操作偏压下在该超晶格结构中形成?高场区域。 |
| 7. | Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
本文基于gaas等?族化合物半导体的转移电子理论，结合半绝缘gaas光电导开关中特有的lock - on效应的研究，提出了类似于耿畴(高场畴或偶极畴)的单极电荷畴理论模型，对光电导开关lock - on效应的各种现象给出了理论解释。 |
| 8. | In addition , the breakdown and the degeneration of pcss " s are serious problems in the applications . in this dissertation the mode of luminous charge domain is perfected ulteriorly by deeply studying the dynamics characteristic of high - field domain of the trans - electron device with experiment stability of nonlinear pcss
本文在通过对转移电子器件偶极畴的动力学特征作了深入分析的基础上，结合非线性pcss ' s的稳定性实验，对非线性pcss ' s的光激发电荷畴理论模型作了进一步的完善。 |
| 9. | In order to investigate the effect of high - field hot - carrier on devices and circuits , the electrical stress experiment is carried out with 1 . 2 n m , 1 . 0 n m and 0 . 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology . by using the fresh and degraded experiment data , bsim2 model parameters are extracted
为了分析研究高场热载流子效应对器件和电路特性可靠性的影响，采用自动测试与cad技术相结合的监测系统，对国内沟道长度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet进行了电应力退化实验，并根据实验结果提取了退化前后器件的bsim2模型参数。 |
