| 1. | A breakdown model of thin drift region ldmos with a step doping profile
器件多晶硅栅量子效应的解析模型 |
| 2. | An analysis of voltage temperature parameter of high - voltage ldmos threshold value
阈值电压的温度系数分析 |
| 3. | . auto - restart counter circuit made the circuits to be controlled perfectly
主控门电路实现各子电路对功率ldmos的最终控制并驱动功率管。 |
| 4. | It is represented the optimization and implementation of step drift doping profiles soi ldmos
Soi阶梯掺杂漂移区ldmos的优化设计与制备实验。 |
| 5. | Therefore , it is very important to study and model electrical characteristic of ldmos because of its practical application
因此，对ldmos器件的电学特性研究与建模有着重要实际意义。 |
| 6. | Over - temperature shutdown circuit made the main circuits shut down in the condition that the temperature of chip was over 135
热保护电路在芯片温度高于135时关断功率ldmos以保护芯片不被烧坏。 |
| 7. | A feasible way to produce soi material with located charge trenches was presented . the process programs of soi ldmos were finally given
此外，设计具有局域电荷槽结构的soildmos器件的版图和工艺制备流程，并进行工艺制备。 |
| 8. | In a word , for the merged power ldmoss , vbr = 400v . for the low side ldmos , vbr = 425v , ron = 0 . 1 . cm2 , ton 30ns ， toff 140ns . r = 6 , for i = 0 . 35a , p 静态 = 0 . 74w
把该功率器件集成在spic的内部，使spic的效率更高、性能更好、成本更低。 |
| 9. | With the development of semiconductor technology , ldmos is more and more widely used in power integrated circuits and smart power circuits
随着半导体工艺技术的不断成熟， ldmos越来越广泛地应用于功率集成电路及智能功率集成电路中。 |
| 10. | Lateral high - voltage power device ldmos has advantages of high - voltage , large gain , wide dynamic range , low distortion and compatibility with low - voltage circuit process
横向高压功率器件ldmos有耐高压、增益大、动态范围宽、失真低和易于和低压电路工艺兼容等特点。 |
