| 1. | To overcome the bottle - neck , electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed
为了解决这一问题，电子回旋共振ecr等离子体增强有机金属气相沉积( ecr - pemocvd )应运而生。 |
| 2. | In this thesis , the zns , znse films and znse quantum dots ( qds ) have been obtained by metalorganic chemical vapor deposition ( mocvd )
本论文利用金属有机化学气相沉积( mocvd )系统控制生长条件制备了zns 、 znse薄膜和znse量子点。 |
| 3. | Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition . the p - type gan was achieved with high hole concentration 8 . 2810
应用mg离子注入mocvd法生长掺杂mg的gan中，在经过800 , 1h的退火后，获得高空穴载流子浓度8 . 2810 |
| 4. | At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ) , molecule beam epitaxy ( mbe ) as well as hvpe
目前gan的外延生长技术一般采用有机金属化学气相外延法( mocvd ) ，在蓝宝石衬底的( 0001 )面上外延生长gan材料，另外还有分子束外延技术( mbe )及卤化物汽相外延技术( hvpe )等。 |
| 5. | Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/氮化矽双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。 |
| 6. | In order to study these two questions , high quality nanocrystalline zno thin films were prepared by thermal oxidation of zns thin films , which were deposited by using low pressure metalorganic chemical vapor deposition technique
针对这两方面问题我们做了如下研究：利用低压金属有机化学气相沉积（ lp - mocvd ）工艺，首先在二氧化硅衬底上生长纳米zns薄膜，然后，在不同温度下进行热氧化处理。 |
| 7. | Fortunately , with the improvement in the material growth , gap1 - xnx alloys with nitrogen concentration as high as several percentage have been successfully grown by molecular beam epitaxy ( mbe ) or metalorganic vapor - phase epitaxy ( movpe ) . more and more attentions have been paid to this alloy for its distinct property such as the giant band gap and effect , for this reason , gap1 - xnx alloys are usually called abnormal alloys
人们研究发现， gapn混晶具有一些独特的光电性质，例如其带隙不是gap和gan的线性内插值，而是存在着较大的带隙降低和巨大的带隙弯曲系数，因此gapn混晶又被称为“反常”混晶，从而引起了人们越来越多的关注，并成为当前的一个研究热点。 |
