| 1. | Strengthening phase mg2si is precipitated in the structure of alloy
组织中有强化相mg _ 2si相析出。 |
| 2. | As a result , the electric conductivity of mg2si was increased with the increasing of the dopant
所以能够大幅度提高mg一si基热电体系的整体热电性能。 |
| 3. | The nono - powder of bn was selected to change the thermoelectric properties of mg2si based thermoelectric materials
本文选择了纳米bn粉以改变mg _ 2si基热电材料的热电性能。 |
| 4. | The doping with a little bn powder is favorableness for the mg2si based thermoelectric materials " thermoelectric properties
但整体看来，掺杂少量的bn纳米粉对材料的热电性能是有利的。 |
| 5. | So the synthesis process must be optimized to avoid the formation of the above impurities and the oxidation of the synthesized mg2si
因此必须对工艺过程加以控制以避免杂质的产生和生成的mg _ 2si被氧化。 |
| 6. | This paper have reviewed detailed the thermoelectricity , the history of thermoelectric materials and the current situation of mg2si based thermoelectric material
本文首先对热电现象、热电材料的发展历史以及mg _ 2si基热电材料的研究进展作了比较详细的综述。 |
| 7. | The results showed that the mg2si - based thermoelectric material doped with te and sb was still n - type , but that doped with ag changed into p - type
结果表明：掺杂te 、 sb元素得到的mg _ 2si基热电材料仍为n型半导体；掺杂ag元素得到的mg _ 2si基热电材料转变为p型半导体。 |
| 8. | The basic thermodynamic theory was introduced to calculate the gibbs function changes of mg - si - 0 system and was used to discuss the process of synthesizing the mg2si powder
本文应用热力学理论对mg _ 2si制备过程进行了讨论，并探讨了固相反应进行的可能性及工艺制度的确立。 |
| 9. | The studies in existence showed that the solid solutions which based with mg2si and doped with other elements are good thermoelectric semiconductors working at mid - temperature ( 400 - 700k )
已有的研究表明，以mg _ 2si为基、通过掺杂得到的固溶体是优秀的中温区( 400 - 700k )热电半导体材料。 |
| 10. | Te , sb and ag were selected as the dopants in the synthesizing process of mg2si , and the influence of dopants and dopants " amount on thermoelectric properties of mg2si specimen was studied
选择te 、 sb 、 ag元素作为掺杂对象，研究了掺杂元素种类和掺杂量对mr _ 2si基热电材料热电性能的影响。 |
