| 1. | Analysis of nanometrology and atom photolithography
纳米计量与原子光刻技术分析 |
| 2. | Why not use photolithography to make nanostructures
为什麽不使用光蚀刻法制造奈米结构？ |
| 3. | Recent progress in photolithography technology
光刻技术及其新进展 |
| 4. | 1 photolithography : forming electrodes in the form required on the ito film
1光刻：在ito表面形成要求形状的电极。 |
| 5. | Alignment precision - displacement of patterns that occurs during the photolithography process
套准精度-在光刻工艺中精的形图移转度。 |
| 6. | Alignment precision - displacement of patterns that occurs during the photolithography process
套准精度-在光刻工艺中转移图形的精度。 |
| 7. | Various technical improvements have made it possible to push the limits of photolithography
各种技术若能改进，便可推进光蚀刻法的极限。 |
| 8. | The beam division method in maskless laser interference photolithography can be divided into wave - front division and amplitude division
摘要无掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。 |
| 9. | So it is urgent to develop the wavefront engineering , and find a new technology to improve the resolution in photolithography
因此，有必要拓宽波前工程学的研究内容，发展光刻分辨率增强新技术和新方法。 |
| 10. | Photolithography then reduces the size of the pattern in a process analogous to that used in a photographic darkroom [ see illustration on opposite page ]
接著，光蚀刻法用一种类似照相暗房中进行的过程（见右页图） ，把图案的尺寸缩小。 |
