| 1. | A study of stability on threshold voltage of pmos dosimeters
剂量计的稳定性研究 |
| 2. | Influence of irradiation bias field on response of pmos dosimeters
剂量计辐照响应的影响 |
| 3. | Hole - sheet - density in sige pmos quantum well with - doping - layer
量子阱沟道空穴面密度研究 |
| 4. | This is due to the fact that each transistor in a cmos circuit is actually made from a pmos transistor and an nmos transistor
这是由于cmos里的每一个晶体管都是由一个pmos和一个nmos晶体管组成的。 |
| 5. | In order to get strain from the channel , by process , deposit si3n4 at nmos and adopt the silicon - germanium epitaxy on source / drain by pmos , can effective improve nmos and pmos electronic characteristic
中文摘要近年来，为了提升金氧半场效电晶体工作频率及性能，尺寸不断微缩，让相同面积晶片可以拥有更多的电晶体数量。 |
| 6. | Besides , silicon substrate is bent by applying external mechanical stress , the lattice of channel will have strain due to uniaxial tensile stress by nmos and strain due to uniaxial compressive stress by pmos
但微影技术已经接近瓶颈，所以我们必须另外寻找能够提升电晶体效能的方法，应变矽就是目前提升电晶体性能最热门的方法。 |
| 7. | We simulated and adjusted the energy and dose of implant impurity by the aid of silvaco software so as to confine the vt value in a reasonable range and finally we got eligible device samples
最后，我们基于silvaco软件模拟并调节了杂质注入的能量和剂量，并结合实验结果调整了pmos管和nmos管的阈值电压，制备出了合格的bmhmt工作模式的soi异质结mosfet单管。 |
| 8. | Here we take the strained si cap layer with relaxed sige layer grown epitaxially by uhvcvd to form nmosfet and relaxed si cap layer with strained sige layer to form pmosfet as comparison to bulk sample
在论文中我们给出了两种不同的材料结构来与体si材料进行比较，用应变的sicap层和弛豫的sige材料层构建nmos管，用弛豫的sicap层和应变的sige材料层构建pmos管。 |
| 9. | The sfdr and thd are up to 68db and - 61db . the inl and dnl are smaller than 0 . 5lsb . the structure of the converter is improved based on traditional one so that the area of glitch is reduced sharply and the dynamic character is improved
在电路结构上,提出了单位电流源中的开关差分控制信号交叉点的最优值,并在差分开关上叠加一对常开pmos管,有效减小了输出毛刺面积,改善了动态性能。 |
