English translation for "vdmos"

垂直双扩散金属氧化物半导体结构

Example Sentences:

	1.	Base on detailed analysis about physical mechanism of power vdmos , we present a macro - model which can accurately represent the characteristics of target power vdmos from - 50 ~ 125 此宏模型能在- 50 ~ 125范围内,准确的模拟功率vdmos的直流和动态特性。
	2.	Major contents of this study are abstracted as following : 1 . analyze the dc , thermal and dynamic characteristics of power vdmos , and propose a new equivalent circuit 论文主要工作包括: 1 .详细研究了功率vdmos的直流特性、热特性和动态特性,提出一种新的等效电路结构。
	3.	However , traditional mosfet models in hspice library are built for lateral mosfet with small power and they can ’ t represent the characteristics of power vdmos well 然而, hspice模型库中传统的mosfet模型都是根据横向结构的小功率mosfet工作机理建立的,无法准确模拟垂直结构的功率vdmos的各种特性。
	4.	This thesis comes from a cooperating project which is to build spice simulation model for a latest power vdmos product of a well - known semiconductor company in the usa 论文来源于和美国某著名半导体公司合作的项目。本文在深入分析功率vdmos工作机理的基础上,为其公司最新推出的一款功率vdmos器件建立了hspice仿真宏模型。
	5.	Power vdmos ( vertical double - diffusion mosfet ) is the most favorable device available for high speed , medium power applications because of its characteristics such as high input impedance , high power gain , easy to drive and good thermal stability 功率vdmos (垂直双扩散mosfet )以其高输入阻抗、高功率增益、驱动电路简单和热稳定性好等优点,在高速度和中等功率场合得到了广泛的应用。
	6.	The most popular method to solve this problem is using basic models that have been already defined in hspice library to build an equivalent circuit , and then use this equivalent circuit as the simulation model for power vdmmos . this is so called macro - model 针对这一问题,国内外普遍采用的是宏模型( macromodel )的方法,即用hspice中已定义的基本物理模型的组合,来描述功率vdmos器件的等效电路,并将等效电路作为功率vdmos的hspice仿真模型。
	7.	A sub - circuit model for vdmos is built according to its physical structure . parameters and formulas describing the device are also derived from this model . comparing to former results , this model avoids too many technical parameters and simplify the sub - circuit efficiently . as a result of numeric computation , this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response ( dc error within 5 % , ac error within 10 % ) . such a model is now available for circuit simulation and parameter extraction 从vdmos的物理结构出发建立子电路模型,进而导出描述其交直流特性的参数及模型公式.相对以往文献的结果,该模型避免了过多工艺参数的引入,同时对子电路进行了有效的简化.在参数提取软件中的加载结果表明,该模型结构简单,运算速度快,物理概念清晰,拟合曲线与测试数据符合精度高(直流误差5以内,交流误差10以内) ,适于在电路模拟及参数提取软件中应用
	8.	Abstract : a sub - circuit model for vdmos is built according to its physical structure . parameters and formulas describing the device are also derived from this model . comparing to former results , this model avoids too many technical parameters and simplify the sub - circuit efficiently . as a result of numeric computation , this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response ( dc error within 5 % , ac error within 10 % ) . such a model is now available for circuit simulation and parameter extraction 文摘:从vdmos的物理结构出发建立子电路模型,进而导出描述其交直流特性的参数及模型公式.相对以往文献的结果,该模型避免了过多工艺参数的引入,同时对子电路进行了有效的简化.在参数提取软件中的加载结果表明,该模型结构简单,运算速度快,物理概念清晰,拟合曲线与测试数据符合精度高(直流误差5以内,交流误差10以内) ,适于在电路模拟及参数提取软件中应用

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