| 1. | Secondary ion mass spectrometry
二次离子质谱法 |
| 2. | Secondary ion mass spectrometer
二次离子质谱计 |
| 3. | Secondary ion spectroscopy
二次离子谱法 |
| 4. | Secondary ion spectrometer
二次离子谱仪 |
| 5. | Secondary ion background
二次离子本底 |
| 6. | Among the destructive techniques able to provide the desired depth resolution the most widely used technique is secondary - ion - mass spectroscopy ( sims )
在可以提供所希望的纵向分辨率的损伤技术中，最广泛运用的是二次离子质谱（ sims ） 。 |
| 7. | The sims , ir and raman analysis results show that the tritium permeation barrier ( tpb ) is formed when tic and sio2 films are annealed in hydrogen at about 350 ?
利用二次离子质谱( sims ) 、红外吸收光谱( ir )及激光喇曼光谱( raman )技术，证实了tic和sio2在350左右的氢中退火可形成防氚渗透阻挡层。 |
| 8. | The conductivity , components and profile of the n - type diamond were characterized by hall effect , secondary ion mass spectrometry ( sims ) and the scanning electron microscopy ( sem )
通过hall效应，二次离子质谱( sims )及扫描电子显微镜( sem )等多种技术手段，对n -型金刚石薄膜的导电特性、成分和薄膜的形貌等方面进行了表征。 |
| 9. | The sims showed that the result of the concentration and the abundance ratio of li - 7 and li - 6 in the palladium wire were changed . it implied that the laser triggering on a pd wire with a low gas - loading ratio may have produced the nuclear process
并通过二次离子质谱仪( sims )测出了钯丝中锂- 7和锂- 6的浓度变化和丰度比变化，说明在低充氢率的钯丝中，在小功率激光的触发下有产生核过程的可能。 |
| 10. | Polycrystalline diamond films were deposited on n - type si substrates . in order to achieve a better distribution of the implanted element , boron ions were implanted by two steps . the i - v curves were studied , the p - n junction effect is very evident
在n型引衬底上沉积一层连续的金刚石膜，通过二次离子注入的方法使b离子比较均匀的分布在金刚石膜中，通过测量i - v曲线，可以明显的看出p - n结效应的存在。 |
