| 1. | Alignment precision - displacement of patterns that occurs during the photolithography process
套准精度-在光刻工艺中精的形图移转度。 |
| 2. | Alignment precision - displacement of patterns that occurs during the photolithography process
套准精度-在光刻工艺中转移图形的精度。 |
| 3. | Pre - exposure bake ' s time has been extended in light etching course for favorable patterns
在光刻工艺过程中，适当延长前烘时间可得到良好的显影图案。 |
| 4. | The branch split - ratio is decided by practical fabrication process , so we have n ' t discussed it
另外，分支比是由版图和光刻工艺实现的，所以没有进行详细讨论。 |
| 5. | Micro stereolithography , a kind of rapid prototyping techniques is introduced firstly in this paper
本文首先针对微管道的制造问题，介绍了一种快速成型工艺? ?微立体光刻工艺。 |
| 6. | How to use the measured effective diffusion length and scanner illumination condition to demonstrate photolithography line width uniformity is introduced
摘要介绍了如何通过测量得出的等效扩散长度和光刻机的照明条件来对任何光刻工艺的线宽均匀性进行评估。 |
| 7. | Electric film ’ s facture on surface of crystal was investigated , 30 . 4 m poled period was designed , and the effect on periodically structure of aster chisel craft was analyzed
研究了晶体表面导电掩膜的制作,设计了30 . 4 m的极化周期,分析了光刻工艺对周期性结构的影响。 |
| 8. | P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology
本文采用p型单晶硅片，由热氧化形成sio _ 2掩膜层，标准光刻工艺进行图形转移，用koh溶液湿法刻蚀制作倒四棱锥腐蚀坑列阵。 |
| 9. | Finally , ldw technology on spherical substrate is discussed . the problems in writing process are analyzed in detail and its solutions are given . some primary experimental results are provided
开展了球面激光直写光刻技术研究，分析了球面直写光刻工艺实验难点，提出了有效的解决办法，进行了初步的实验研究。 |
| 10. | 3 . finally , we explore a serial of other fabrication technology of sbd of high frequency , including oxidation techniques , photoetching techniques and vacuum deposition . an original sbd of high frequency has been made
最后，利用所生长的薄硅外延片，探索出其它一系列相关的高频肖特基二极管的制作工艺，包括氧化工艺、光刻工艺、真空镀膜工艺等，制作出了高频肖特基二极管的原型器件。 |
