Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress 本文主要研究了典型尺寸的n型金属诱导横向结晶多晶硅薄膜晶体管在两种常见的直流应力偏置下的退化现象:热载流子退化和自加热退化。
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The solving object is a set of governing equations of a flow field with weak compressibility . we also simulate the dispersion characteristic and concentration field of solid particles of various typical sizes in the jet field with one - way coupling method 本文的求解对象为有弱可压缩性的流场控制方程组，并采用单向耦合的方法模拟各种典型尺寸的颗粒在射流流场中的扩散行为和浓度分布规律。
