| 1. | In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully . 和化学气相淀积工艺相反,虽然在操作中对于固体砷还是必须非常小心掌握,但是,分子束外延不需要庞大的安定保险装置。 |
| 2. | Strain and relaxation of mbe - hgcdte films 分子束外延薄膜的应变弛豫 |
| 3. | Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy 的分子束外延生长 |
| 4. | Interdiffusion of si and ge atoms during epitaxy growth of ge layer on si studied by raman spectroscopy 分子束外延生长高应变单量子阱激光器 |
| 5. | We have grown ingaas / algaas strained quantum well laser by mbe . we studied the doped density in the cladding layer 采用分子束外延设备mbe ( molecularbeamepitaxy )对所设计的应变量子阱结构激光器进行晶体生长。 |
| 6. | In light of them , matching pmosfet and nmosfet with strained si channel were designed . 2 . the epitaxy layers including lt ( low temperature ) si grow technicsare discussed 2 .研究了包括400下分子束外延法生长100nm的低温硅层的各外延层生长技术。 |
| 7. | Mocvd , mbe and hvpe have become dominating techniques to grow gan materials . among these methods , mocvd is the most important and widely used by researchers 目前,金属有机气相沉积( mocvd ) 、分子束外延( mbe )和氢化物气相外延( hvpe )等方法已经成为制备gan的主流工艺,其中mocvd使用的最为广泛。 |
| 8. | Main works and results include : ( 1 ) . growth method of self - organized quantum dots was studied . high quality inas self - organized quantum dots were grown by mbe ( molecular beam epitaxy ) technique 本文开展的主要工作和结果有: ( 1 )研究了自组织量子点的生长方法,利用分子束外延技术( mbe )生长出高质量的inas自组织量子点。 |
| 9. | At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ) , molecule beam epitaxy ( mbe ) as well as hvpe 目前gan的外延生长技术一般采用有机金属化学气相外延法( mocvd ) ,在蓝宝石衬底的( 0001 )面上外延生长gan材料,另外还有分子束外延技术( mbe )及卤化物汽相外延技术( hvpe )等。 |
| 10. | High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out 本文研究了在gaas和gap衬底上,本征型和n型al掺杂zns基单晶薄膜的分子束外延生长,获得了高质量的单晶外延薄膜。 |