| 1. | The diamond film is grown on the horizontal power diodes as their heat sink 将金刚石薄膜应用于功率二极管(横向)的热沉。 |
| 2. | Therefore , it is essential to develop novel material switching power diodes 因此,采用新材料开发具有良好性能的功率二极管越来越重要。 |
| 3. | High - efficient coupling technology is the key technology of the high power diode - pumped solid state laser systems 大口径激光二极管阵列的高效泵浦耦合技术是高功率二极管泵浦固体激光系统急需解决的关键技术之一。 |
| 4. | These improvements are achieved without resorting lifetime killing and thus the devices can be easily integrated into power ics . this paper is good for design and manufacture of p + ( sige ) - n " - n + hetero - junction power diodes 取得的成果对于p + ( sige )一n一n +异质结功率二极管的设计和研制工作均具有一定的参考价值。 |
| 5. | The performance of state - of - the art silicon pin diodes is now approaching the theoretical limits , and it is apparent that further advances in silicon technology are very difficult because of material properties 传统的sipin功率二极管由于si材料特性的局限性,很难实现开关速度、通态压降和反向漏电流三者良好的折衷。 |
| 6. | High power diode laser is the requirement to research on the high - average - power diode - pumped solid - state lasers , so the package techniques of the diode laser is studied first in this thesis 高功率二极管激光器是开展高平均功率dpl研究的必要条件。本文首先研究了高功率二极管激光器封装技术,二极管条散热冷却是高功率二极管激光器封装要解决的核心问题。 |
| 7. | With the more and more extensive application of power electronics technology , especially with the increasing frequency of main switching device , there have a higher requirement to the power switching diode . the si p - i - n diode have played an important role in these areas so many years 随着电力电子技术应用的深入,尤其是主开关器件工作频率的不断提高,对功率二极管性能提出了更高的要求,多年来硅p - i - n二极管一直在这方面扮演着重要角色。 |
| 8. | Under the incentive of the civil - market demanding such as laser material processing and the military - market demanding such as a new generation of laser weapon candidate and icf , diode - pumped solid laser ( dpsl ) develops rapidly worldwide . as an important application , diode - pumped intracavity - frequency - doubled laser is attached much importance in recent years , but there still remain many problems unresolved completely . in this paper , i have given some abecedarian study results on some of these problems theoretically and experimentally 因工业激光材料加工等民用市场的需求以及惯性约束聚变和作为新一代激光武器候选器件等军方需求的推动,国际上高功率二极管泵浦固体激光器( dpsl )的研究进展迅速,作为dpsl的一个重要应用,内腔倍频一直得到大家的重视,但仍有许多未彻底解决的问题和理论上的不完备之处,本论文拟对其中的一些问题作一初步的理论和实验研究。 |
| 9. | On the base of the study on si / sige hetero - junction fast switching power diode , two kinds of novel structure of sige / si pin diode are proposed in abstract this paper . the one is the gradual changing doping concentration in the n - region , and the other is sige pin diode with mesa structure 本文在对sige si异质结快速开关功率二极管的研究基础上,提出了两种sige si快速开关功率二极管的新结构: ?基区渐变掺杂型sige异质结开关功率二极管和台面结构sige异质结开关功率二极管。 |
| 10. | On the base of the study on sige material physics characteristic , sige / si hetero - junction characteristic , we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region , and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface 本文针对sige材料的物理特性、 sige si异质结特性建立了准确的物理参数模型。在详细论述了sige si异质结功率二极管良好特性的基础上,提出了两种快速软恢复sige si功率二极管新结构: n ~ -区采用多层渐变掺杂和阴极侧采用理想欧姆接触。 |