| 1. | For the first time , we obtain a ( 002 ) orientated high quality zno thin films with the full width at half maximum ( fwhm ) of 0 . 2o located at 34 . 42o at a low temperature of 180
首次报道了用这种方法在衬底温度为180oc条件下制备了（ 0002 ）择优取向，其x -射线衍射峰的半峰宽为0 . 2度的高质量氧化锌薄膜。 |
| 2. | By comparable investigation , two luminescence mechanisms can explain the different variety of pl intensity of origin and annealed samples and are dominant mechanisms separately in unanneal and anneal course
经过退火处理后，在相同波长的光激发下发光强度逐渐增强，峰型逐渐变好，发光谱带的半峰宽也变窄。 |
| 3. | This paper introduces the half peak width method ( ki index ) which is widely used in the or1d to analyze the permo - carboniferous sample from budate group in geier sag in hailaer basin and northern songliao basin
引入国际通行的半峰宽法（ ki指数法） ，对海拉尔盆地贝尔凹陷布达特群和松辽盆地北部石炭二叠系的样品进行了分析。 |
| 4. | The equivalent - circuit parameters and resonant frequencies of the piezoelectric quartz crystal resonance , the value of half peak width of the electroacoustic conductance spectrum ( fg1 / 2 ) as well as the electrical double - layer capacitance were obtained and analyzed
获得并分析了pqc谐振等效电路参数、谐振频率、电导谱半峰宽f _ ( g1 2 )和双电层电容，考察了电极界面发生的吸附动力学过程。 |
| 5. | Two pl peaks are found in the ingaas pl spectrum at 10k when growth temperature is at 550c . only one pl peak is found when growth temperature is in the range between 630c and 650c , the intensity of pl at 650c is more than one at 630c
在生长温度为550时， ingaas的10k光致发光谱是由两个峰组成，在生长温度为630和650时，样品的光致发光谱中变为只有一个峰，而且在650发光强度比630强，发光谱的半峰宽也是650最窄。 |
| 6. | ( 2 ) several samples of different structure parameters are grown by low - pressure metal - organic chemical vapor deposition ( lp - mocvd ) . it is found that pl peak intensity , full width at half maximum ( fwhm ) and light output intensity are greatly dependent on number of wells . ratio of well / barrier width nearly has no effect on pl peak intensity and fwhm , but has little relation to light output intensity
通过分析pls ，可以及时获取材料生长和结构设计的数据，对质量控制有重要的指导意义； ( 2 )对不同结构的gainp algainp多量子阱样品进行了光致发光及出光强度的测量，发现mqw的周期数目n对pl峰强度、半峰宽和出光强度的影响最大；阱垒宽厚度比a对pl峰强度和半峰宽的影响较小，但对发光强度的影响较大。 |
| 7. | 5nm and 10nm respec live1y , but the ye1 l ( ) w band i s also found on the ijl spectra of these two samp1es . the yel low peak i s very strong in 1 # samp1e , its intensi ty is higher than that of the ilear - - band peak . while the ye11ow band is quite weak compairing with the 1 # samp1e , and its radio of ye1low - - band / near - - band is on1y 0
1 # 、 2 #样品的pl谱峰均很窄，其fwhm (半峰宽)仅为7 . 5nm和10nm ，但两个样品的pl谱均出现了黄峰， 1 #的黄峰较高，其强度超过了带边峰，而2 #的黄峰得到很大改善，其黄带带边峰强度比仅为0 . 17 。 |
| 8. | By the control of deposition process , it is succeeded in preparing ( 100 ) high - orientation diamond films with maximum single grain ' s size about 100 100um and 4 . 693 ? fwhm ( full width of half maximum ) in xrd shocking scan curve , and also preparing 75mm large area transparent diamond films with 68 . 3 % average transparence
通过对沉积过程的控制，制备了( 100 )高取向金刚石膜，摇摆曲线半峰宽( fwhm )为4 . 693 ，最大单个晶粒的尺寸为100 100 m ，同时还制备了75mm的大面积透明金刚石膜，平均透光率达68 . 3 。 |
