English translation for "反应室"

reaction chamber
reactive cell (chamber)
reactor

Example Sentences:

	1.	Reaction chamber reactor 反应室反应器
	2.	Acted by the accelerated electrons , the materials of carbon source were taken the form of plasma in the chamber 在被加速的电子作用下，碳源物质在反应室中形成等离子体。
	3.	If the invaders can gain access to the reactor room by blowing up the four security terminals , they can blow up the titan 如果入侵者炸毁四个安全终端，就能进入到反应室，也就能炸毁泰坦。
	4.	All these has provided us with scientific basis for designing the chamber of icp etching system and selecting the appropriate etching samples 这些结论为设计icp刻蚀系统的反应室、选择合适的刻蚀工艺提供了科学的根据。
	5.	The nitrogen atoms involving in the chemical reaction originated from the working gas and nitrogen gas in the reactive chamber , and the latter is chief 喷涂过程中参与反应的n元素来自离子气和反应室中的n _ 2气，以后者为主。
	6.	The growth mechanism of the ordered nanowires is discussed . novel 2 - d semiconductor sic nanonetworks have been synthesized at relatively low - temperature via vapor chemical reaction approach in homemade graphite reaction cell 用简单气相化学反应法，于自制石墨反应室中，在无空间限制和较低温度下，合成出大面积新型二维半导体sic纳米线网。
	7.	The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source . the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen 采用等离子体辅助化学气相沉积方法，以碳氢化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作为碳源物质，用高纯氢气作为载气，将碳源物质携带进入反应室。
	8.	This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film . by means of single probe and double probe , the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed . the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained 利用单探针和双探针诊断30mm高反应室和50mm高反应室在各种工艺条件下的离子密度和电子温度，得到这两个参数在反应室轴向位置的空间分布、随功率和气压的变化曲线、顶盖接地和反应室体积对它们的影响，结果表明离子密度为10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，电子温度在4 10ev之间；当顶盖接地时，该处的等离子体密度明显大于不接地；在同样条件下， 50mm高反应室内的离子密度明显大于30mm高反应室。
	9.	Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer , and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d , which was revealed by scanning electron microscope 发现缓冲层的生长压力变化对退火后缓冲层表面的状态影响极大，增大缓冲层生长时的反应室压力可以明显提高外延gan的晶体质量和光学质量。通过sem分析，发现提高缓冲层生长压力时，高温gan生长明显经历了从三维生长到二维生长的过渡，晶体质量明显提高。
	10.	The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of 对于碳化工艺,侧重研究了碳化时间、反应室气压、 c源气体的流量、碳化温度以及不同种类的c源气体、基片取向等因素对碳化层质量的影响,研究结果表明:随着碳化时间的增长,碳化层的晶粒尺寸随之变大,表面粗糙度随之降低,但当碳化到一定时间之后,碳化反应减缓,碳化层的晶粒尺寸以及表面粗糙度的变化幅度变小;碳化层的晶粒尺寸随反应室气压的升高而变大,适中的反应室气压可得到表面比较平整的碳化层;在c源气体的流量相对较小时,碳化层的晶粒尺寸随气体流量的变化不明显,但当气体流量增大到一定程度时,碳化层的晶粒尺寸随气体流量的增大而明显变大,同时,适中的气体流量得到的碳化层表面粗糙度较低;碳化温度较低时,碳化层的晶粒取向不明显,随着碳化温度的升高,碳化层的晶粒尺寸明显变大,且有微弱的单晶取向出现,但取向较差,同时,适中的碳化温度可得到表面平整的碳化层;相比于c _ 2h _ 2 ,以ch _ 4作为c源气体时得到的碳化层表面平整得多;比起si ( 100 ) ,选用si ( 111 )作为基片生长的碳化层的晶粒取向一致性明显更好。

Similar Words：

"反应式涡轮" English translation, "反应式叶片" English translation, "反应式终端服务" English translation, "反应适当性" English translation, "反应适切性" English translation, "反应室清除" English translation, "反应视距" English translation, "反应试杯" English translation, "反应试验" English translation, "反应收气剂" English translation