| 1. | Ion cyclotron resonance mass spectrometer ; icr mass spectrometer
离子回旋共振质谱计 |
| 2. | Fouier transform ion cyclotron resonance mass spertrometer ft - icr - ms
傅立叶变换离子回旋共振质谱计 |
| 3. | Cyclotron resonance mass spectrometer
回旋共振质谱计 |
| 4. | Cyclotron resonance heating
回旋共振加热 |
| 5. | Ion cyclotron resonance
离子回旋共振 |
| 6. | To overcome the bottle - neck , electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed
为了解决这一问题，电子回旋共振ecr等离子体增强有机金属气相沉积( ecr - pemocvd )应运而生。 |
| 7. | Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave
摘要采用微波电子回旋共振等离子体反应离子刻蚀( ecr - rie )装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。 |
| 8. | But the deposition rate and quality of a - si : h was primarily affected by preparation methods . recently , the microwave electron cyclotron resonance ( mwecr ) cvd method was weightily studied
为了获得高速沉积下的高品质a - si : h薄膜，使其能够产业化，微波电子回旋共振化学气相沉积( mwecrcvd )方法在国际上受到了人们广泛的重视。 |
| 9. | In view of its virtue of high degree of electron and ion generations , the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate
鉴于微波电子回旋共振化学气相沉积( mwecrcvd )系统具有电子和离子产生率高等优点，人们期望它能在较高的沉积速率下获得器件级质量的a - si ： h薄膜。 |
| 10. | The gas sources that we used are trimethylgallium ( tmg ) and 99 . 9999 % purity nitrogen , which were fed into reaction chamber and resonance cavity respectively . the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field . consequently , gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream
实验采用有机金属三甲基镓气源( tmg )和99 . 9999纯度的氮气，在ecr - pecvd150装置共振腔内电子回旋共振吸收微波能量产生的高密度ecr等离子体在磁场梯度和等离子体密度梯度的作用下向下级反应室扩散，在放置于下游区样品台上的- al _ 2o _ 3衬底表面附近发生物理化学反应沉积成gan薄膜。 |
