| 1. | Commercial gaas epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible .
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。 |
| 2. | Single layer growth of strained epitaxy at low temperature
低温下应变外延层的单层生长 |
| 3. | A study of sige si epitaxial layers growth at the low temperature
类铁电薄膜低温外延层状生长研究 |
| 4. | Calculation of the lattice mismatch between semiconductor epitaxy and substrate
半导体外延层晶格失配度的计算 |
| 5. | Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
砷化镓外延层厚度红外干涉测量方法 |
| 6. | Dynamic simulation of rocking curve for semiconductor film and epitaxal material
半导体薄膜及外延层材料摇摆曲线的动态模拟 |
| 7. | Test method for resistivity of silicon epitaxial layers by area contacts three - probe techniques
硅外延层电阻率的面接触三探针.测试方法 |
| 8. | Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method
砷化镓外延层载流子浓度电容-电压测量方法 |
| 9. | Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers
半导体工艺材料的检验.硅晶体外延层缺陷种类和缺陷密 |
| 10. | Commercial gaas epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible
市售gaas外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。 |
