English translation for "扩散源"
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- diffusant source
diffuse source
diffused source
diffusion source
Related Translations:
扩散传输: diffuse transmission 扩散渗析: diffusion dialysisdiffusive dialysis 扩散热处理: diffusing heat treatment 扩散效应: diffusing effectdiffusion effectdiffusional effectspread effectspreading effect
- Example Sentences:
| 1. | the source is which is placed along with the polished substrate in an evacuated, sealed quartz ampoule.
扩散源与抛光衬底一起置放在抽真空密封的石英管内。 | | 2. | The best way to avoid getting germs is stay away from these areas where germs spread
防止感染微生物最好的办法是远离这些微生物扩散源。 | | 3. | < uk > the source is which is placed along with the polished substrate in an evacuated , sealed quartz ampoule . < / uk >
< uk >扩散源与抛光衬底一起置放在抽真空密封的石英管内。 < / uk > | | 4. | According to amount and distribution of gas diffusion sources in strata section , this paper put forward a method dividing the gas diffusion systems in strata section
根据地层剖面中天然气扩散源个数及分布，提出了天然气在地层剖面中的扩散系统划分方法。 | | 5. | Based on calculating gas diffusion loss amount from each gas diffusion system , this paper calculated total gas diffusion loss amount in the condition of many diffusion sources by the method of adding up
在每个扩散系统天然气扩散损失量计算的基础上，利用累加方法求取多扩散源条件下天然气扩散损失量。 | | 6. | The performance of devices is directly decided by the impurity distribution in the diffused region , and the impurity distribution may be affected by the material thermal properties , the mechanism of diffusion , the power of laser and the diffusion time
激光诱导扩散过程中,基片的热物理特性、扩散源的扩散机理、激光束的功率大小和扩散时间以及光束的聚焦状况等等,都会对扩散结果产生重要的影响,而扩散层的杂质分布情况将直接决定器件的性能指标。 | | 7. | At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency
在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。 | | 8. | In this paper , we used different doping means to prepare the mn - doped gaas material . firstly , we incorporated mn of different dose into gaas by ion implantation , including the couple - ion implantation with mn + and c , then performed rapid thermal annealing in different temperature . furthermore , we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion
本论文利用不同掺杂方法进行了掺mngaas这种dms材料样品的制备，首先利用离子注入法对砷化镓( gaas )材料进行不同剂量的锰( mn ~ + )离子注入，其中包括加碳( c )的双离子注入，然后在不同温度下进行快速退火处理；此外还利用扩散法对gaas晶片进行不同mn扩散源(纯mn 、及mnas )的掺杂。 |
- Similar Words：
- "扩散与集中" English translation, "扩散元件" English translation, "扩散元素" English translation, "扩散原理" English translation, "扩散原子" English translation, "扩散云室" English translation, "扩散运动型" English translation, "扩散晕" English translation, "扩散晕影" English translation, "扩散杂质" English translation
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