English translation for "抛光液"
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- liquid polishing agent
polishing fluid
polishing solution
Related Translations:
抛光轧辊: polishing rollspolishingroll 抛光粉: burnishing powderpolishing powderpolishingpowderputty
- Example Sentences:
| 1. | Corrosive effect of slurry inhibitor on copper wafer
抛光液中缓蚀剂对铜硅片的影响 | | 2. | Passivation and abrasion of copper in hac - koh - kcio3 slurry
3抛光液中铜的钝化与磨损研究 | | 3. | Corrosion and passivation of copper in the cmp slurry of ch3nh2 - k3 fe
铁氰化钾化学机械抛光液中的腐蚀与钝化 | | 4. | Study on the mechanism about formation of passive film on copper in ch3 nh2 - k3 fe
铁氰化钾抛光液中铜钝化成膜的机理研究 | | 5. | What does advanced unigrit technology mean and what does it have to do with m86 cut & polish cream
什么是先进的无砂粒技术和它为什么与m86切割&抛光液一起使用 | | 6. | The experimental results indicate that for litao3 the oxidizers are naclo and h2o2 , the stabilizator is koh and the most suitable ph value is 10
寻找有效的氧化剂及其合适的浓度，确定合理的稳定剂及抛光液的适当ph值。 | | 7. | Based on the orthogonal experiment , the effect of some control factors , such as concentration of individual component , temperature and operation - times on the quality of polished copper and its alloy are discussed
在此基础上讨论了抛光液各组分浓度、抛光温度以及抛光次数对抛光效果的影响。 | | 8. | To find out the effective slurry with suitable type of oxidizer and concentration , chemical etching experiment was applied to the litao3 wafer . the chemical etching effects were analysed by measuring etching rate and x - ray spectrum
采用化学腐蚀实验方法研究抛光液中氧化剂种类和浓度以及抛光液ph值对钽酸锂晶片化学去除的影响。 | | 9. | The cmp experiment was carried out systematically on litao3 wafer . the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition , pressure , rotating speed of the polishing plate , the type and size of abrasive , and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details
通过对钽酸锂晶片的化学机械抛光过程的实验研究，通过测量钽酸锂晶片在不同抛光条件下的表面粗糙度和材料去除率，详细分析了抛光垫材料和状态、抛光压力、抛光盘转速、磨料种类及粒度、抛光液组成等几个因素对抛光表面质量和材料去除率的影响规律。 | | 10. | The polishing technology of ccos is studied by a series of experiments . the effect of polishing process parameters on the removal efficiency and the stability of the removal function are studied , which include the polishing compound , the density of the polishing fluid , ph of the polishing fluid , the polishing velocity , the polishing pressure and so on . finally , a suit of effective process parameters are given and better experimental result are obtain
在大量工艺实验的基础上,揭示了抛光剂种类、抛光液的供给量、抛光液浓度、抛光液的酸度值( ph值) 、抛光速度、抛光压力、抛光模材料、抛光模直径及胶层厚度等对抛光效率和去除函数稳定性的影响规律;最后,总结了一套抛光工艺,利用该工艺进行的抛光精度收敛性实验达到了较好的效果。 |
- Similar Words：
- "抛光外圆" English translation, "抛光纹" English translation, "抛光线" English translation, "抛光压力锅" English translation, "抛光氧化铝粉" English translation, "抛光用腐蚀剂" English translation, "抛光用硅藻石" English translation, "抛光用红丹粉" English translation, "抛光用红丹粉 擦亮铁丹" English translation, "抛光用毛毡" English translation
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