| 1. | The sand box model is a reduced scale representation of the natural porous medium domain .
砂槽模型是将天然的多孔介质区域按比例缩小的模型。 |
| 2. | It is like a scale applied to reality
1512它就象是现实按比例缩小的图形。 |
| 3. | The size of your design repeat has to be reduced proportion
花型循环的尺寸必须按比例缩小。 |
| 4. | Be a " to - scale " map of the eu , " she added . " it ' s like an image taken through a photographer ' s
“这不是一张按比例缩小的欧盟地图，它就像是摄影家用鱼眼镜头拍摄的图像一样。 |
| 5. | The miniature working style pictured above is about 30 cm high and accurately reproduces the original one in a proportional ratio
上图中的缩小的模型大约有30厘米高，是原型按比例缩小的模型。 |
| 6. | When you provide a font size , a user s browser can alter those sizes for the visually impaired or scale them down on massive monitors with equally massive resolutions
您提供字体大小时，用户浏览器可以为视障者更改这些大小，或者在大显示器（具有同等大的分辨率）上按比例缩小。 |
| 7. | An experiment of the scaled down fmv forging process is carried out under the conditions of different high reduction and different speed of upper anvil in order to verify the redeveloped deform3d , the constitutive relation inserted in deform3d and the material constitutive parameters
根据大型汽轮机转子的实际锻造过程，完成了几种不同的压下量和变形速度的按比例缩小的fmv拔长工艺模拟试验。 |
| 8. | Interconnection dimensions become the limitation for new performance design while the size traditional transistor has met the demand of challenge . thus , the study of interconnection delay becomes more important for current circuit design and technology
为了提高ulsi的频率特性，按比例缩小晶体管的特征尺寸的努力受到了互连线本征特性和寄生效应的限制，互连线的rc延迟成为ulsi进一步提高频率特性的瓶颈。 |
| 9. | With the continued scaling - down of mosfet , the ultra - thin gate oxide causes some serious problems of devices . the ultra - thin sio2 dielectrics cause significant leakage current , consequently increases standby power of device . meanwhile , the reliability of gate dielectrics is also degraded
当mosfet器件按比例缩小到70nm尺寸以下时，传统的sio _ 2栅介质的厚度将需要在1 . 5nm以下，如此薄的sio _ 2层产生的栅泄漏电流会由于显著的量子直接隧穿效应而变得不可接受，器件可靠性也成为一个严重的问题。 |
| 10. | Account for the high electrical field induced from the high applied voltage relative to small dimension device , the mechanism of hot - carrier generation is analysed , the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed
基于mosfet偏压不能按比例缩小所导致的高电场，对mosfet的热载流子产生机理进行了分析，导出了热载流子注入所引起的界面态的si - h健断裂模型，并建立了表征器件热载流子效应的衬底电流模型。 |
