| 1. | Study on the population structure of northeast hare lepus mands huricus radde from eye lens weight dividing age group
用晶体质量划分年龄组调查东北兔的种群组成 |
| 2. | A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )
A )利用超高真空化学气相沉积( uhv - cvd )技术在重掺si衬底上生长高晶体质量的亚微米级薄硅外延片。 |
| 3. | As for our 3 # detector , we didn " t find response , which may attribute to the difficulty in cubic gan growth and the bad qua1ity of the epitaxia1 1ayer
但3探测器没观察到应有的l响应特性，这与立方相结构的gan材料生长困难，晶体质量不高有关。 |
| 4. | Combining the resu1t of l { alnan spectra , we reach the conclusion that the crysta1 qua1 i ty of 2 # sall1p1e is better than that of 1 # sample , afld 3 # samp1e is the worst
结合raman的测量结果我们得出2 #材料的晶体质量比1 #的好，而立方相的3 #样品质量最差。 |
| 5. | From the result of the practice , this structure enhances the brightness of led effectively , improves the quality of the crystal and improves the performance of the device
并且从实验结果看，双层突变异质结有效提高发光亮度，改善了器件参数，晶体质量变好。 |
| 6. | Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator
首次采用超高真空电子束蒸发的方法在多孔硅上成功地外延出晶体质量和电学性能良好的单晶硅。 |
| 7. | Based on the requirement of the device , we grow the films of silicon of high quality . the thickness of the epilayer is from 0 . 4 u m tol p m , the doping concentration can be controlled conveniently
然后，根据器件的要求，利用uhv cvd技术，生长出优质薄硅外延片，其厚度在0 . 4 m 1 m ，掺杂浓度可任意调节，晶体质量良好。 |
| 8. | Results from various measurement technique show that sige films grown by uhvcvd have higher crystal quality than those by ssmbe and gsmbe . and uhvcvd is proposed to be employed in the further work of our sige - oi fabrication
从这些测试结果可以得出， uhvcvd方法可以生长的高质量、未弛豫的sige薄膜，而ssmbe和gsmbe生长的sige层都发生了一定程度的弛豫，晶体质量相对较差。 |
| 9. | The structurally perfect and high - quality ba0 . 5sr0 . 5tio3 single - crystalline thin films were prepared on laalo3 and mgo substrates by pulsed laser depositioa the ba0 . 1sr0 . 9tio3 / yba2cu3o7 - heterostructure films were fabricated by pulsed laser deposition on a vicinal laalo3 su bstrates
详尽地分析这些薄膜的衍射图样可知，薄膜都是以外延特性生长的而且晶体质量良好，但薄膜生长模式及表面平整度受沉积条件影响较大。 |
| 10. | Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer , and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d , which was revealed by scanning electron microscope
发现缓冲层的生长压力变化对退火后缓冲层表面的状态影响极大，增大缓冲层生长时的反应室压力可以明显提高外延gan的晶体质量和光学质量。通过sem分析，发现提高缓冲层生长压力时，高温gan生长明显经历了从三维生长到二维生长的过渡，晶体质量明显提高。 |
