| 1. | Calculation of the lattice mismatch between semiconductor epitaxy and substrate
半导体外延层晶格失配度的计算 |
| 2. | The different definitions of lattice mismatch are compared with each other
摘要比较了晶格失配度的各种定义，建议统一使用同一定义。 |
| 3. | However , the simulation results of the superlattice with 4 % lattice mismatch show that the thermal conductivity increases monotonically with the period length
而对于具有4 %晶格失配的超晶格模拟结果却表明，超晶格导热系数随周期长度的增大而单调上升。 |
| 4. | These results indicate that lattice mismatch is the main reason why minimum thermal conductivity has not been observed in a large number of experimental studies
这一研究结果表明，材料的晶格失配是大多数实验研究中没有发现超晶格最小导热系数的主要原因。 |
| 5. | In the end thin film ybig was grown onto substrate ybilg . then the structure and component of these films were measured and anaslysed by the measurements such as xrd , sem , epma , etc
Ybiig 、 ybig系列石榴石薄膜的生长、测试结果表明，晶格失配度对lpe外延成功与否起重要作用。 |
| 6. | This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy , which has the capability for improving device structure and characteristics
这种技术解决了外延生长难以解决的晶格失配问题，为改善器件结构及性能提供了巨大的潜力。 |
| 7. | The xrd results show that the sputtered lcmo film grains are grown epitaxially , when the lattice mismatch between film and substrate is small . the lcmo thin films grown on sto substrates show an in - plane tensile stress
Xrd的研究结果表明,当基片与lcmo薄膜间的晶格失配度较小时,薄膜和基片具有一致的晶格取向,薄膜具有较好的外延结构特征。 |
| 8. | In order to deal with large mismatch ( 14 . 6 % at room temperature ) between gaas and insb , a insb buffer layer was deposited firstly at low temperature 350 , followed by a insb epilayer being deposited at higher temperature 440
为了克服insb与gaas间14 . 6 %的晶格失配度,实验设计先低温生长一定厚度的insb缓冲层,随后升温生长insb外延层。 |
| 9. | As well , the compress stress existed in ( 002 ) crystal plane are found and can be explained by the matching between film material and substrate material as well as the different thermal expand coefficient between them
同时， zno薄膜( 002 )方向上存在着内应力，内应力是由膜材料与基底材料之间的晶格失配和不同热扩散系数造成的，退火可可使内应力的到不同程度的释放。 |
| 10. | And , the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate
而且，随着膜厚的增加，处于底层的膜层起到缓冲层的作用，逐渐改善着薄膜与衬底之间的晶格失配，从而使得sbn薄膜在( 001 )方向的优先取向性越来越好。 |
