The intrinsic carrier concentration reduces when decreasing the v / iii ratio . the high quality of in0 . 53gao . 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs . when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0 . 2 um the mobility becomes the maximum and the carrier concentration is the lowest /比对外延层的表面形貌有较大影响，增大/比有利于提高材料的结晶质量；随着/比增加，迁移率升高；本征载流子浓度随着/比减少而降低； ash _ 3和ph _ 3转换时间在10秒到30秒之间可以获得质量较好的ingaas外延层；在inp缓冲层厚度为0 . 2 m时迁移率达到最大，载流子浓度达到最低。
