English translation for "气保护"

gas shield

Example Sentences:

	1.	Argon cooling chamber 氩气保护冷却室
	2.	Produces high voltage and low voltage switch equipments , automatic control equipments and dc power equipments -生产和出口cd - r光盘空白录象带v - 0盒dvd盒cd盒气保护药芯焊丝等。
	3.	Ni3al has a good wettability with tic . in purified argon atmosphere , melt ni3al can infiltrate tic preforms spontaneously Ni _ 3al熔体在氩气保护下，可以自发浸渗充满多孔tic预制体。
	4.	Flux cored wires for gas shielded and self - shielded metal arc welding of mild steel , high strength steel and low temperature service steel 低碳钢高强度钢和低温钢用气保护和自保护金属电弧焊用管状焊丝
	5.	Sintering time ranges from 3 to 10 hours , and sintering temperature ranges from 160ctc to 1900 ? , under an ar . protection of 1 . 0 atm 在1 . 0atm的ar气保护下进行烧结，选用的烧结时间从3小时到10小时，烧结温度由1600到1900 。
	6.	Sintering time ranges from 3 to 10 hours , and sintering ranges from 1600 @ to 1900 @ , after sintering , the samples are dry - oxidized in an oxidization furnace and then have their excessive carbon removed by diamond - cream grinding or direct grinding 气保护下进行烧结，烧结完成后，用干氧法在氧化炉中氧化并研磨或直接研磨的方法去除样品表面过量的碳。
	7.	Dsc , xrd , and edx analysis were adopted to explore the solid - state reaction processing parameters . the results showed that zrnisn - based compounds were synthesized at 1173k with holding for 96 ~ 168hrs , which were also under high purity ar shielding 结果表明：通过固相反应， zrnisn基化合物可以在高纯ar气保护下于1173k保温96 168小时获得：各种组分的产物晶型完整且无杂质相出现。
	8.	Limnoa has been synthesized from self - synthesized material y - mn203 by wet moist chemical method under different sinter conditions in argon . the material was analyzed by xrd , sem . it is shown by xrd that material is limno2 single phase in 450 keeping 5h , then in 600 ? sintering 6h in argon 通过xrd物相分析发现:以自制原料y一mnzo3为锰源，在a :气保护下，采用湿化学法，在450下，预烧结5h研磨后再于600下烧结6h ，可以合成出单相limnoz 。
	9.	The n type carrier was provided by interstitial zn atom , and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility . when zno thin film was annealed in the ar ambience , p conduction type was founded in the zno thin film which grew in oxygen enrichment condition . this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ) , and p type carrier was from oi 在ar气保护下,对富氧条件下生长的zno薄膜的退火后的霍尔测量中发现, zno薄膜呈现p型导电状态,分析认为,这可能是由于富氧状态下生长的zno薄膜中过量的o在ar气保护下退火没有逸出薄膜,反而进入了zno薄膜的间隙位置,成为正电中心,使zno薄膜呈现p型导电。

Similar Words：

"气包" English translation, "气包盖" English translation, "气包盖座" English translation, "气包体" English translation, "气包子" English translation, "气保护弧焊机" English translation, "气保护金属极电弧焊" English translation, "气保护碳弧焊" English translation, "气保护钨极电弧焊" English translation, "气保护柱钉焊接" English translation