| 1. | Silica base sand
氧化矽基砂 |
| 2. | The principle and the main parameters of the dry etching for silicon dioxide are introduced
摘要阐述了二氧化矽干法蚀刻的原理和主要的蚀刻参数。 |
| 3. | The influence of nano - silica on the properties and microstructure of corundum castable is studied
摘要研究纳米二氧化矽的加入对刚玉浇注料性能与结构的影响。 |
| 4. | Hf - based solution is widely used for cleaning and wet etching sio2 in pre - diffusion clean process
摘要以氟化氢为基础的溶液被广泛地用在扩散前清洗工艺中的二氧化矽清洗与蚀刻中。 |
| 5. | This is because nano - silica can accelerate the sintering process and promote the densification of corundum castble
这是由于纳米二氧化矽能够促进刚玉浇注料的烧结，使结构致密化所致。 |
| 6. | The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them
薄膜先以微影及蚀刻制程制作出金属线路，线路之间则填入二氧化矽。 |
| 7. | In the most advanced 2 - d chips , this layer of silicon dioxide insulation measures just three nanometers ? about two dozen atoms ? in thickness
在最先进的二维晶片中，二氧化矽绝缘层仅3奈米厚，大约是24颗原子的宽度。 |
| 8. | It ' s likely that some other material will soon have to replace silicon dioxide , but toolmakers have yet to agree on what that material will be
看来改用二氧化矽以外的材料势在必行，只是该用何种材料，这一行的专家目前尚无共识。 |
| 9. | These ions implant themselves deep down , relatively speaking , where they combine with atoms in the wafer and form a layer of silicon dioxide
相较之下，这些离子会深深植入晶圆中，它们在那里与晶圆的原子结合，并形成一层二氧化矽。 |
| 10. | A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices
摘要提出一种二氧化矽多晶矽二氧化矽夹心深槽场限制环新结构来提高晶体管的击穿电压。 |
