| 1. | Its optimum growth temperature was at 32 , and the optimum growth ph was at ph 5
其最适生长温度为32 ，最佳生长ph值为5 。 |
| 2. | The growth temperature was 518 “ c , as probed by a profile thermocouple located inside the reactor
生长温度在518c ，由位于反应腔下的热电耦检测。 |
| 3. | ( 2 ) the cp cells conserved in 10 ? fail to reculture because of apopotosis of cp
（ 2 ）细胞凋亡是cp细胞在10c保存时间过长导致细胞不能在正常生长温度下恢复生长的根本原因。 |
| 4. | The fwhm of pl at 650c is the narrowest . the variation of pl with excited intensity and temperatures were discussed respectively
当生长温度到达680时，光致发光谱变成由两个峰组成。 |
| 5. | The effects of the growth temperature and duration on the growth of aligned carbon nanotube array were studied with the help of sem and tem
为了优化定向碳纳米管阵列的制备，对生长温度及生长时间进行了研究。 |
| 6. | For solution with certain compositons , it behaved as the growing temperature tg . when tg . is too high , the film was hard to grown or did n ' t grow well
而对于确定r值的熔液，则主要表现为过冷度的选取，也即生长温度的选取。 |
| 7. | We studied the factor that influence the quality of gaas , algaas and ingaas by mbe , and studied the growth temperature , growth time and the flux ratio of v - iii beam
研究了影响mbe生长gaas 、 algaas和ingaas等单晶材料质量的一些因素，对mbe生长温度、生长时间和生长时的-族束流比进行了研究。 |
| 8. | The experiments show : growth temperature is one of the key growth parameter by which the surface morphology , alloy composition , crystalline quality , mobility and carrier concentration are influenced
实验表明：生长温度是一个重要的生长参数，它对外延层的表面形貌、组分、结晶质量、迁移率、载流子浓度有着很大影响。 |
| 9. | This process is called carbon nanotube - confined reaction . sic grains and solid sic whiskers with the diameter of 120 nm to 160 nm are formed by carbon nanotube - confined reaction . the size of grains and the whisker diameters increase
采用c纳米管限域法所生长的sic晶须则是实心的,直径达120nm 160nm ,并有sic颗粒生成,生长温度越高,合成晶须的直径和颗粒的粒径越大。 |
| 10. | E ) with the help of pecvd , we found that high substrate temperature is advantage to the basal plane orientation . higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly
E ）高温有利于基面平行于衬底的取向，在高的生长温度下吸附于衬底表面的沉积粒子能够迅速迁移到二维核的位置，并使粒子有足够能量调整位置。 |
