| 1. | Specification for silicon epitaxial wafer for microwave power transistor
微波功率晶体管用硅外延片规范 |
| 2. | Silicon extending slice
硅外延片 |
| 3. | Test method for resistivity of silicon epitaxial layers by area contacts three - probe techniques
硅外延层电阻率的面接触三探针.测试方法 |
| 4. | The concrete work in this thesis : 1 ) fabrication of high response frequency sbd using thin si epi - layer
本文的具体工作可归纳为： 1 )薄硅外延片研制高频肖特基二极管的原型器件。 |
| 5. | B ) sbd was made using the si epilayer as the active layer , qualified with a set of device technology
B )在薄硅外延片的生长基础上，探索制作肖特基二极管的相关工艺，研制高频sbd原型器件。 |
| 6. | Testing of semi - conductive inorganic materials ; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
半导体无机材料的试验.用红外线干涉法测量硅外延生长 |
| 7. | A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )
A )利用超高真空化学气相沉积( uhv - cvd )技术在重掺si衬底上生长高晶体质量的亚微米级薄硅外延片。 |
| 8. | Based on the requirement of the device , we grow the films of silicon of high quality . the thickness of the epilayer is from 0 . 4 u m tol p m , the doping concentration can be controlled conveniently
然后，根据器件的要求，利用uhv cvd技术，生长出优质薄硅外延片，其厚度在0 . 4 m 1 m ，掺杂浓度可任意调节，晶体质量良好。 |
| 9. | As a result , the cutoff frequency of sbd is limited at a lower level . now , we can grow sub - micro film of silicon using uhv / cvd technology . then we make an original device sbd of high frequency
现在，我们浙江大学硅材料国家重点实验室利用uhv cvd技术，生长出亚微米厚的薄硅外延层，在此外延层上研制出高频肖特基二极管原型器件。 |
| 10. | Because of the limitation of thin silicon film epitaxial technology , it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time , which makes the series resistance large
但长期以来，由于薄硅外延生长技术的限制，无法生长出优质的厚度小于2 m的薄硅外延层，使硅肖特基二极管的串联电阻无法降的更低，限制了其截止频率的提高。 |
