English translation for "硅层"

silica

Example Sentences:

	1.	Bonded wafers - two silicon wafers that have been bonded together by silicon dioxide , which acts as an insulating layer 绑定晶圆片-两个二过通片圆晶氧化硅层结合到一起，作为绝缘层。
	2.	In light of them , matching pmosfet and nmosfet with strained si channel were designed . 2 . the epitaxy layers including lt ( low temperature ) si grow technicsare discussed 2 .研究了包括400下分子束外延法生长100nm的低温硅层的各外延层生长技术。
	3.	Up to present we have prepared the epitaxial simox substrate ( i layer 0 . 37um , silicon layer 2 . 8um ) , and done the circuit design , process integration , device simulation and some layout design ) 本项目目前已完成了simox外延衬底的制备（ i层0 . 37um ，外延硅层2 . 8um ） ，以及功率开关集成电路的电路设计，工艺设计和部分版图设计。
	4.	It also has short protection and voltage overshot protection block . devices and ics based on esoi have the advantages of not only cheaper substrate , good performance of soi technology , but also obtaining a certain breakdown voltage and optimization of self - heating effect 基于esoi的器件及集成电路不仅衬底材料制备工艺简单，硅层厚度均匀性好，器件及电路特性具有soi结构的优点，而且还兼顾一定的耐压，对自加热效应也得到优化。
	5.	Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon , for instance quantum confinement effect model , polysilanes model , siloxen and its derivant , surfacial states model and quantum confinement - light center model etc . in addition , study status of ps at present is addressed and applied problems in some fields are analyzed in this section 多年来，人们对多孔硅发光机理一直进行着坚持不懈的探讨和研究，提出了许多种解释多孔硅层( psl )发光的模型，典型的有下列几种：量子限制模型、硅-氢键或多硅烷( polysilanes )的发光、硅氧烯及其衍生物的发光、表面态模型和量子限制-发光中心模型。
	6.	After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide 其次,根据器件参量对阈值电压和输出特性的影响,以提高器件的跨导和电流驱动能力为目的设计了strained - soimosfet器件结构,详细分析栅极类型和栅氧化层厚度、应变硅层厚度、 ge组分、埋氧层深度和厚度以及掺杂浓度的取值,对器件进行优化设计。

Similar Words：

"硅玻璃碗" English translation, "硅不完整性" English translation, "硅材料公司" English translation, "硅草科" English translation, "硅草酸,硅乙二酸" English translation, "硅层土" English translation, "硅掺杂" English translation, "硅场效应晶体管" English translation, "硅长斑石" English translation, "硅长石" English translation