| 1. | Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma
等离子体对硅表面的低温大面积氮化 |
| 2. | Various surface passivations of ps , such as by hydrogen , oxygen , nitrogen and noble metals , have been compared . the pss were formed by photoelectrochemical means
常见的表面修饰方法包括对多孔硅表面进行氢钝化、氧钝化、氮钝化、金属钝化等，这些修饰方法各有其特点。 |
| 3. | All the experiment analyses are presented in chapter 3 , including the lodging of negative resistance effect based on the measurement of the parameters of ga - diffusion trans
结构中近硅表面微区域浓度的变化规律， ga扩散过程的三个阶段包括预沉积、再分布和二次氧化，对应于ga在a |
| 4. | Dangling bonds exist at the surface of porous silicon , which leads to the drop of the light - emitting efficiency . to apply porous silicon into practice , surface modification is necessary
多孔硅表面存在大量的悬挂键，容易引起发光效率的降低，行之有效的克服方法是进行表面修饰。 |
| 5. | Placing a thin layer of insulation between the silicon surface and the transistors protects the transistors from " electrical effects , " leading to higher performance and lower power consumption
在硅表面之间放上很薄的一层绝缘体，可以防止晶体管的“电子效应” ，这样可以实现更高的性能和更低的功耗。 |
| 6. | Our experiment results showed that the photoluminescence mechanism of porous silicon was ascribed to the co - effect of quantum confinement and the surface materials of porous silicon
以上的多孔硅发光现象不能用单纯的量子限域机制进行解释，实验结果表明它是由量子限域和多孔硅表面物质共同作用的结果。 |
| 7. | ( 4 ) preliminary investigation of the mechanism of electroless nickel on silicon showed that the catalysis of . silicon surface was acquired by the oxidation of silicon that prompts the deposition of nickel
( 4 )对单晶硅表面化学镀镍的机理进行了初步的探讨，结果表明硅表面的化学镀催化活性可能是由硅的氧化反应促使镍离子沉积成镍核所形成的。 |
| 8. | By carefully checking the leed pattern , it is found that the " ( 2x2 ) " pattem is actually a combination of the c ( 2 x 2 ) reconstruction from the ersi , island surfaces and the ( 2x l ) reconstruction from the bare si substrae
对（ x2 ）再构的低能电子衍射的仔细研究表明，实验中观察到的px2 ）再构实际上是来自于饵硅化物的叶x2 ）再构与来自硅表面的cxi八门2 ）再构的迭加产物。 |
| 9. | After analysis of the xrd data , an obvious small peak was observed at 29 = 32 . 62 ? the experimental results showed that the improved stabilization of the porous silicon layers was due to the formation of sio2 ( 1103 ) structure in the internal surface
Xrd光谱显示在2口= 32 . 620出现了一个小峰，揭示了经过过氧化氢后处理后多孔硅表面形成了一层二氧化硅( l10刀)脱，从而提高了多孔硅厚膜的稳定性。 |
| 10. | Mems optical switch for optical communication is fabrication by silicon surface micromachining technology . surface micromachining technique , based on the standard cmos processes , in the other hand , offers greater flexibility for realizing free - space optical systems on a single chip
Mems光开关是采用表面微细机械加工技术制作而成，硅表面微机械加工技术是以cmos集成电路工艺为基础的，它可以灵活地把光开关集成在一块硅片上。 |
