English translation for "离子能量"

ion energy

Related Translations:

离解能量:  dissipation energy

能量更迭:  energy alternation

能量品质:  energy quality

空运能量:  lift capacity

百万能量:  megaton energy

载重能量:  dead weight capacityload-carrying capacity

能量食品:  energy

终点能量:  end point energy

实质能量:  practical capacity

能量图解:  energy diagram

Example Sentences:

	1.	The energy revision of hydrogen - like ion 对类氢离子能量的修正
	2.	Scattering ion energy 散射离子能量
	3.	During the study on the mutation effects of ion beam on arabidopsis seeds , it was found that the sensitivity degree of different ecotype seeds was different . plant survival rate could be affected by different ions " energy and ions " type 在对离子注入拟南芥种子引起的诱变效应的研究过程中发现，不同生态型拟南芥种子对注入剂量的敏感度不同，离子能量、离子类型对种子成苗率也有影响。
	4.	In order to improve the resolution power , the energy method need increase ion total energy , while , the choice of the right gas pressure , the right flight length and increase total energy are effective to improvement of resolution for gf - tof method 增加对同量异位素的分辨能力，对e - e探测方法就要增加离子能量，而gf - tof方法除了增加离子能量外，合理的选择飞行路径的长度也能提高分辨能力。
	5.	In the hipib film deposition , high purity graphite was employed as target . relations between process parameters and the microstructure , as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate , which affects the intensity and ion energy of hipib ablated plasma , and the temperature of substrate in the film deposition processes . the mechanism of film deposition by hipib ablated plasma was explored also 在薄膜沉积方面，利用高纯石墨作靶材，调整薄膜沉积过程中的靶基距(烧蚀等离子体密度、离子能量)和基片温度，研究实验工艺对hipib烧蚀等离子体方法制备的dlc薄膜的微观结构和宏观物理性能的影响，探讨了hipib烧蚀等离子体沉积dlc薄膜的成膜机理。
	6.	In the section of fabricating technology , i first discuss the ion beam technology . through the analysis of the effects of each parameter on the surface smoothness , profile fidelity and linewidth resolution in the process of ion etching , the suitable angle of incident ion beam , ion energy , density of ion beam and time of etching are selected combining the actual status of the mask 在制作工艺的研究方面，首先研究了离子束刻蚀技术，通过对离子束刻蚀过程中各个参数对刻蚀元件的表面光洁度、轮廓保真度和线宽分辨的影响分析，结合掩膜的实际情况选择出了合适的离子束入射角、离子能量、束流密度和刻蚀时间等参数。
	7.	Ii ) energies of the sputtered atoms vary mainly from several to several teens ev , with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally , and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions , but the angular distributions are not influenced by the incident energy very greatly Ii )溅射原子的能量一般集中在几个到十几个电子伏特的范围内，在高能量区域也有所分布，但数量很少;溅射原子的出射位置就在离子入射位置的附近(埃数量级) ;溅射原子的角度在垂直方向和斜射方向都有所分布，但以垂直出射为主;溅射原子的能量、角度分布受到了入射离子能量、角度的影响，但入射离子能量对溅射原子的出射角影响不大。
	8.	Second , monte - carlo method is used to simulate the transports of ions penetrating through the rf sheath in terms of the above sheath dynamic model . here , both elastic collisions and charge - exchange collisions between ions and neutral particles are considered . the effects of collisions on the distributions of ions energy and angle incident on the substrate were calculated 其次，利用已建立的碰撞等离子体鞘层模型和monte - carlo方法模拟了离子在射频鞘层电场中的运动过程，不仅考虑了离子同中性粒子的电荷交换碰撞，还考虑了它们之间的弹性碰撞过程，研究了碰撞效应对入射到基板上的离子能量分布和角度分布的影响。
	9.	The experimental results show that the n contents in the multilayers are higher at the lower incidence ion energy and current . the n contents increase with the increasing of the substrate temperature . the n contents in the films also arose by using the assisted ion beam 实验结果表明：入射离子能量较低、束流较低时，制得薄膜的n含量较高；升高温度能增加薄膜中的n含量；辅助离子束的使用同样增加了薄膜中的n含量；获得的cn _ x tin _ y薄膜的最高含n量为49 . 52at 。
	10.	The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed . etching characteristics of materials , including pr , cr , quartz , are investigated . the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy , ion beam density and ion incidence angle in pure ar and chf3 , respectively . the etch rate has shown a square root dependence on variation versus 深入研究了光刻胶、铬薄膜、石英等光学材料离子束刻蚀特性,分别以ar气和chf3为工作气体,研究光刻胶、铬薄膜、石英等的刻蚀速率随离子能量,束流密度和离子入射角度的变化关系,得到刻蚀速率与影响因素的拟合方程,为掩模的制作工艺路线提供了实验依据和理论指导。

Similar Words：

"离子膜烧碱" English translation, "离子膜稳定运行的影响因素分析" English translation, "离子摩擦" English translation, "离子能" English translation, "离子能阶分裂" English translation, "离子能量发散" English translation, "离子能量平衡" English translation, "离子能量损耗率" English translation, "离子能量选择器" English translation, "离子能选择器" English translation