| 1. | The crystals were cleaned by argon ion bombardment .
结晶体由氩离子轰击而净化。 |
| 2. | Ion bombardment secondary electron image
离子轰击二次电子象 |
| 3. | Wear resistance of tc11 titanium alloy modified layer treated by ion bombardment processing for dry conditions
11合金离子轰击改性层的耐磨性 |
| 4. | Silicon wafers are zapped with ions , which form tiny islands with either an excess or a dearth of electrons
矽晶圆用离子轰击，而在其上形成微小的岛，各自具有过量或是不足的电子。 |
| 5. | Vacuum base plating machine can perform high - voltage bombard function to clean the blank and to make the silver accreting closely
具有高压离子轰击功能，净化晶片表面，强化镀银的附着力。 |
| 6. | Since non - uniform electronic emission , poor recovery after ion bombardment and too expensive of sc2o3 , scandate cathode has not been vastly used
但含钪扩散阴极存在发射均匀性不好、抗离子轰击性差以及价格昂贵等因素的制约而没有获得广泛的应用。 |
| 7. | Interfacial atoms diffusion or covalence by a circulated - argon ion bombardment process could improve the adhesion strength between the coatings and the uranium substrate
循环氩离子轰击镀方法可促进使膜-基界面原子间的扩散或键合，有利于提高膜-基结合强度。 |
| 8. | In the paper , the effect of ion bombarding on nucleation of diamond by negative substrate bias - enhanced was investigated in theory , and some experimental phenomena were explained
摘要从理论上研究了负衬底偏压增强离子轰击对金刚石核化的影响，并用理论解释了一些实验现象。 |
| 9. | Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film
第二章和第三章分别从引入离子轰击和施加直流偏压电场两方面着重研究了外界条件作为辅助手段对非晶碳生长的影响。 |
| 10. | The mechanisms of diamond nucleation and growth are discussed , and it is believed that the continued ion bombardment during the deposition process is a key factor for the growth of nanocrystalline diamond film using ch4 and h2
探讨了金刚石的核化机制和纳米金刚石的形成机制，认为沉积过程中的持续的离子轰击是ch _ 4和h _ 2体系制备纳米金刚石薄膜的关键。 |
