| 1. | Inductive coupled plasma enhanced cvd system
电感性耦合等离子体增强型 |
| 2. | Capacitive coupled plasma en - hanced cvd system
电容性耦合等离子体增强 |
| 3. | Magnetic - field - aided plasma enhanced chemical vapor deposition
磁场辅助等离子体增强化学气相沉积 |
| 4. | Rf plasma enhanced cvd system
高频等离子体增强 |
| 5. | Boron - doped silicon nanowires grown by plasma - enhanced chemical vapor deposition
等离子体增强化学气相沉积法实现硅纳米线掺硼 |
| 6. | Pecc plasma enhancing electrochemical ceramiczing coatings organic coatings on aluminum and aluminum alloys
铝及侣合金等离子体增强电化学表面陶瓷化 |
| 7. | Oriented growth of diamond film on si via plasma enhanced hot filament chemical vapor deposition
等离子体增强热丝化学气相沉积法生长取向金刚石薄膜 |
| 8. | To overcome the bottle - neck , electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed
为了解决这一问题，电子回旋共振ecr等离子体增强有机金属气相沉积( ecr - pemocvd )应运而生。 |
| 9. | This thesis detailedly discussed die preparation of zrn films with microware - ecr plasma enhanced magnetron sputtering deposition ( mw - ecrpemsd ) technology
本文探讨了制备zrn薄膜的微波- ecr等离子体增强非平衡磁控溅射沉积工艺。 |
| 10. | 4 . investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation , respectively
4 .分别对300 c下采用等离子体增强化学气相淀积( pecvd )和700 ~ 800 c下采用热氧化技术制备sigehmos器件栅介质薄膜进行了研究。 |
