A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in fig. 32 . 消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
2.
The formation of high - density uniform silicon nanocrystals on insulator substrate and their surface morphology 绝缘衬底上高密度均匀纳米硅量子点的形成与表面形貌
3.
Microelectronic circuits in which the passive components and their metallic interconnections are formed directly on an insulating substrate and the active semiconductor devices ( usually in wafer form ) are added subsequently 一种微电子电路器件，其中的无源元件及内部金属连线直接在绝缘衬底上形成，然后再加上有源半导体器件（通常以大圆片形式给出） 。
