| 1. | 4701 - 50 - firm material used for managing high energy impact with gasketing needs
-硬。适合用于耐压的用途。 |
| 2. | Test methods for insulation resistance and withstand voltage of railway rolling stock
铁路车辆的绝缘电阻及耐压的试验方法 |
| 3. | 4701 - 60 - very firm material used for energy management solutions for enclosure gasketing applications
-非常硬。适合用于耐压的用途。 |
| 4. | 15vac will become about 18 - 19vdc after rectification . that would be a little bit too high for your 15vdc capacitor
经过整流后， 15伏交流电会变成大约18 19伏的直流电。对于15伏直流耐压的电容器，有点太高了。 |
| 5. | Conclusions this prefaricated compound flap including the plantar split - skin and sensitive nerve could provide a reliable covery which wears and presses well and has satisfactory sensation
结论利用预制足心皮片的带有感觉神经复合皮瓣修复足底可以较好地恢复足底耐磨耐压的特有功能。 |
| 6. | The chassis rack is placed inside a transportable trolley ( peli case ) , with handles and small wheels , filled of a o - ring and a pressurization valve to consent the use and the transport in extreme climatic conditions
为适应极端恶劣的气候和自然环境我们将设备安放在一个便携式耐压的，带把手和小轮的高强度抗冲击的箱体内。 |
| 7. | The distributions of interface charge in the bottom of trenches and electric field in insulation layer were studied for the novel structure . the influences of insulation layer thickness and trench width on breakdown voltage were analyzed and compared with analytical results
利用器件二维数值仿真软件medici ，详细研究局域电荷槽内的电荷分布和埋二氧化硅层的电场分布，以及埋二氧化硅厚度和槽宽对耐压的影响。 |
| 8. | During the high - voltage device design , the thick epitaxial layer ldmos which is compatible with current technology was researched . this device used piecewise vld and multiple region structure f reduce field layer . the using of the f reduce field layer effectively reduce the surface electric field of the device , shorten the length of its drift region , enlarge the choice of range of the ion implant dose of the p layer , and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss
在高压器件研究中对与现有工艺相兼容厚外延ldmos进行研究，该结构采用分段变掺杂多区p ~ -降场层，有效降低器件的表面电场，缩短器件的漂移区长度，增大p ~ -降场层注入剂量的选择范围，并有效地抑制界面电荷qss对器件耐压的不利影响。 |
